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AOT210L डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 30V N-Channel MOSFET - Freescale

भाग संख्या AOT210L
समारोह 30V N-Channel MOSFET
मैन्युफैक्चरर्स Freescale 
लोगो Freescale लोगो 
पूर्व दर्शन
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<?=AOT210L?> डेटा पत्रक पीडीएफ

AOT210L pdf
AOT210L/AOB210L
30V N-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS
VGS(th)
ID(ON)
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
ID=250µA, VGS=0V
30
V
VDS=30V, VGS=0V
TJ=55°C
1
5
µA
VDS=0V, VGS= ±20V
100 nA
VDS=VGS ID=250µA
1 1.7 2.2 V
VGS=10V, VDS=5V
400
A
VGS=10V, ID=20A
2.4 2.9
TO220
TJ=125°C
3.7 4.7
RDS(ON) Static Drain-Source On-Resistance
VGS=4.5V, ID=20A
TO220
VGS=10V, ID=20A
TO263
3 3.7 m
2.1 2.6
VGS=4.5V, ID=20A
TO263
gFS Forward Transconductance
VDS=5V, ID=20A
VSD Diode Forward Voltage
IS=1A,VGS=0V
IS Maximum Body-Diode Continuous CurrentG
2.7
78
0.65
3.5
1
105
S
V
A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
2800
920
50
0.5
3520
1320
90
1
4300
1720
120
1.5
pF
pF
pF
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
39 48 58 nC
Qg(4.5V) Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=15V, ID=20A
17 22 27 nC
7 9 11 nC
Qgd Gate Drain Charge
4 7 10 nC
tD(on)
Turn-On DelayTime
11 ns
tr
tD(off)
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=20V, RL=0.75,
RGEN=3
10
38
ns
ns
tf Turn-Off Fall Time
11 ns
trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs
14 21 28 ns
Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
40 58 76 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's
specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ
=25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
2/6
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