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AOT15S60 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power Transistor - Freescale

भाग संख्या AOT15S60
समारोह Power Transistor
मैन्युफैक्चरर्स Freescale 
लोगो Freescale लोगो 
पूर्व दर्शन
1 Page
		
<?=AOT15S60?> डेटा पत्रक पीडीएफ

AOT15S60 pdf
AOT15S60/AOB15S60/AOTF15S60
600V 15A α MOS TM Power Transistor
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V, TJ=25°C
ID=250µA, VGS=0V, TJ=150°C
IDSS Zero Gate Voltage Drain Current
VDS=600V, VGS=0V
VDS=480V, TJ=150°C
IGSS Gate-Body leakage current
VDS=0V, VGS=±30V
VGS(th) Gate Threshold Voltage
VDS=5V,ID=250µA
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=7.5A, TJ=25°C
VGS=10V, ID=7.5A, TJ=150°C
VSD Diode Forward Voltage
IS=7.5A,VGS=0V, TJ=25°C
IS Maximum Body-Diode Continuous Current
ISM Maximum Body-Diode Pulsed CurrentC
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
VGS=0V, VDS=100V, f=1MHz
600 -
-
650 700
-
- -1
- 10 -
- - ±100
2.5 3.2 3.8
- 0.254 0.29
- 0.68 0.78
- 0.83 -
- - 15
- - 63
V
µA
nΑ
V
V
A
A
- 717 -
- 58 -
pF
pF
Co(er)
Co(tr)
Effective output capacitance, energy
related H
Effective output capacitance, time
related I
VGS=0V, VDS=0 to 480V, f=1MHz
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=100V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=480V, ID=7.5A
Qgd Gate Drain Charge
tD(on)
tr
tD(off)
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=400V, ID=7.5A,
RG=25
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=7.5A,dI/dt=100A/µs,VDS=400V
Irm
Peak Reverse Recovery Current
IF=7.5A,dI/dt=100A/µs,VDS=400V
Qrr Body Diode Reverse Recovery Charge IF=7.5A,dI/dt=100A/µs,VDS=400V
- 41.2 -
- 125.2 -
- 1.3 -
- 13.4 -
- 15.6 -
- 3.5 -
- 6.0 -
- 24.5 -
- 22 -
- 84 -
- 24 -
- 282 -
- 26 -
- 4.5 -
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
ns
A
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ
=25°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=2.4A, VDD=150V, Starting TJ=25°C
H. Co(er) is a fixed capacitance that gives the same stored energy as C oss while VDS is rising from 0 to 80% V(BR)DSS.
I. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS.
J. Wavesoldering only allowed at leads.
2/6
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