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AOT14N50 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 14A N-Channel MOSFET - Freescale

भाग संख्या AOT14N50
समारोह 14A N-Channel MOSFET
मैन्युफैक्चरर्स Freescale 
लोगो Freescale लोगो 
पूर्व दर्शन
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<?=AOT14N50?> डेटा पत्रक पीडीएफ

AOT14N50 pdf
AOT14N50/AOB14N50/AOTF14N50
500V, 14A N-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V, TJ=25°C
ID=250µA, VGS=0V, TJ=150°C
500
600
V
BVDSS
/TJ
Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
0.5 V/ oC
IDSS
IGSS
VGS(th)
RDS(ON)
gFS
VSD
IS
ISM
Zero Gate Voltage Drain Current
VDS=500V, VGS=0V
VDS=400V, TJ=125°C
Gate-Body leakage current
VDS=0V, VGS=±30V
Gate Threshold Voltage
VDS=5V ID=250µA
Static Drain-Source On-Resistance VGS=10V, ID=7A
Forward Transconductance
VDS=40V, ID=7A
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
1
µA
10
±100 nΑ
3.3 4.2 4.5
V
0.29 0.38
20 S
0.71 1
V
14 A
56 A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=25V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
1531
153
11
1.75
1914
191
16
3.5
2297
229
20
5.3
pF
pF
pF
SWITCHING PARAMETERS
Qg Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=400V, ID=14A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
tD(off)
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=250V, ID=14A,
RG=25
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=14A,dI/dt=100A/µs,VDS=100V
Qrr Body Diode Reverse Recovery Charge IF=14A,dI/dt=100A/µs,VDS=100V
42.8 51
9.3 11
20.3 24
44 53
84 101
92 110
50 60
289 347
4.93 6
nC
nC
nC
ns
ns
ns
ns
ns
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ
=25°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
G. L=60mH, IAS=6A, VDD=150V, RG=25, Starting TJ=25°C
2/6
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