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AOT12N50 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 12A N-Channel MOSFET - Freescale

भाग संख्या AOT12N50
समारोह 12A N-Channel MOSFET
मैन्युफैक्चरर्स Freescale 
लोगो Freescale लोगो 
पूर्व दर्शन
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<?=AOT12N50?> डेटा पत्रक पीडीएफ

AOT12N50 pdf
AOT12N50/AOB12N50/AOTF12N50
500V, 12A N-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V, TJ=25°C
ID=250µA, VGS=0V, TJ=150°C
500
600
V
BVDSS
/TJ
Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
0.54
V/ oC
IDSS
IGSS
VGS(th)
RDS(ON)
gFS
VSD
IS
ISM
Zero Gate Voltage Drain Current
VDS=500V, VGS=0V
VDS=400V, TJ=125°C
Gate-Body leakage current
VDS=0V, VGS=±30V
Gate Threshold Voltage
VDS=5V ID=250µA
Static Drain-Source On-Resistance VGS=10V, ID=6A
Forward Transconductance
VDS=40V, ID=6A
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
1
µA
10
±100 nΑ
3.3 3.9 4.5
V
0.36 0.52
16 S
0.72 1
V
12 A
48 A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=25V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
1089
134
10
1.8
1361
167
12.6
3.6
1633
200
15
5.4
pF
pF
pF
SWITCHING PARAMETERS
Qg Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=400V, ID=12A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
tD(off)
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=250V, ID=12A,
RG=25
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=12A,dI/dt=100A/µs,VDS=100V
Qrr Body Diode Reverse Recovery Charge IF=12A,dI/dt=100A/µs,VDS=100V
30.7 37
7.6 9
13.0 16
29 35
69 83
82 98
55.5 67
231 277
2.82 3.4
nC
nC
nC
ns
ns
ns
ns
ns
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ
=25°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
G. L=60mH, IAS=5.5A, VDD=150V, RG=25, Starting TJ=25°C
2/6
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