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AOT1100L डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 100V N-Channel Rugged Planar MOSFET - Freescale

भाग संख्या AOT1100L
समारोह 100V N-Channel Rugged Planar MOSFET
मैन्युफैक्चरर्स Freescale 
लोगो Freescale लोगो 
पूर्व दर्शन
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<?=AOT1100L?> डेटा पत्रक पीडीएफ

AOT1100L pdf
AOT1100L/AOB1100L
100V N-Channel Rugged Planar MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
VDS=100V, VGS=0V
IGSS
VGS(th)
ID(ON)
RDS(ON)
gFS
VSD
IS
Gate-Body leakage current
VDS=0V, VGS= ±20V
Gate Threshold Voltage
VDS=VGS, ID=250µΑ
On state drain current
VGS=10V, VDS=5V
VGS=10V, ID=20A
Static Drain-Source On-Resistance
TO220
VGS=10V, ID=20A
TO263
Forward Transconductance
VDS=5V, ID=20A
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous CurrentG
TJ=55°C
TJ=125°C
100
2.6
208
3.2
10
19
9.7
53
0.69
1
5
100
3.8
12
22
11.7
1
130
V
µA
nA
V
A
m
m
S
V
A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=25V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
4833
721
35
0.5 1.1 1.7
pF
pF
pF
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
82 100 nC
Qgs Gate Source Charge
VGS=10V, VDS=50V, ID=20A
23 nC
Qgd Gate Drain Charge
19 nC
tD(on)
Turn-On DelayTime
21 ns
tr Turn-On Rise Time
VGS=10V, VDS=50V, RL=2.5, 22 ns
tD(off)
Turn-Off DelayTime
RGEN=3
50 ns
tf Turn-Off Fall Time
4.5 ns
trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs
64 ns
Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
880 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C. Maximum UIS current limited by test equipment.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current limited by package.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
2/6
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