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IRFHM831PBF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - HEXFET Power MOSFET - International Rectifier

भाग संख्या IRFHM831PBF
समारोह HEXFET Power MOSFET
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
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IRFHM831PBF pdf
IRFHM831PbF
Static @ TJ = 25°C (unless otherwise specified)
BVDSS
ΔΒVDSS/ΔTJ
RDS(on)
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
VGS(th)
ΔVGS(th)
IDSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
IGSS Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
gfs Forward Transconductance
Qg Total Gate Charge
Qg Total Gate Charge
Qgs1 Pre-Vth Gate-to-Source Charge
Qgs2 Post-Vth Gate-to-Source Charge
Qgd Gate-to-Drain Charge
Qgodr
Gate Charge Overdrive
Qsw Switch Charge (Qgs2 + Qgd)
Qoss Output Charge
RG Gate Resistance
td(on)
Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Avalanche Characteristics
Min.
30
–––
–––
–––
1.35
–––
–––
–––
–––
–––
82
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.02
6.6
10.7
1.8
-6.8
–––
–––
–––
–––
–––
16
7.3
1.7
0.9
2.5
2.2
3.4
5.1
0.5
6.9
12
6.2
4.7
1050
190
80
Max. Units
Conditions
–––
–––
7.8
12.6
2.35
–––
V VGS = 0V, ID = 250μA
V/°C Reference to 25°C, ID = 1mA
eemΩ
VGS = 10V, ID = 12A
VGS = 4.5V, ID = 12A
V
mV/°C
VDS
=
VGS,
ID
=
25μA
1.0
150
100
-100
–––
–––
11
μA
VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
nA
VGS = 20V
VGS = -20V
S VDS = 15V, ID = 12A
nC VGS = 10V, VDS = 15V, ID = 12A
––– VDS = 15V
–––
–––
nC
VGS = 4.5V
ID = 12A
––– See Fig.17 & 18
–––
––– nC VDS = 16V, VGS = 0V
––– Ω
––– VDD = 15V, VGS = 4.5V
–––
–––
ns
ID = 12A
RG=1.8Ω
––– See Fig.15
––– VGS = 0V
––– pF VDS = 25V
––– ƒ = 1.0MHz
Parameter
dEAS Single Pulse Avalanche Energy
™IAR Avalanche Current
Diode Characteristics
Typ.
–––
–––
Max.
50
12
Units
mJ
A
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
h––– ––– 40
––– ––– 96
––– ––– 1.0
MOSFET symbol
D
A
showing the
integral reverse
G
S
p-n junction diode.
eV TJ = 25°C, IS = 12A, VGS = 0V
––– 15 22 ns TJ = 25°C, IF = 12A, VDD = 15V
––– 16 24 nC di/dt = 300A/μs
Time is dominated by parasitic Inductance
Thermal Resistance
RθJC (Bottom)
RθJC (Top)
RθJA
RθJA (<10s)
fJunction-to-Case
Parameter
fJunction-to-Case
gJunction-to-Ambient
gJunction-to-Ambient
Typ.
–––
–––
–––
–––
Max.
4.7
44
50
32
Units
°C/W
2 www.irf.com © 2014 International Rectifier
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June 5, 2014

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