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IXFT70N30Q3 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFETs - IXYS

भाग संख्या IXFT70N30Q3
समारोह Power MOSFETs
मैन्युफैक्चरर्स IXYS 
लोगो IXYS लोगो 
पूर्व दर्शन
1 Page
		
<?=IXFT70N30Q3?> डेटा पत्रक पीडीएफ

IXFT70N30Q3 pdf
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
gfs VDS = 20V, ID = 0.5 • ID25, Note 1
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
RGi Gate Input Resistance
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 3Ω (External)
Qg(on)
Qgs
Qgd
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RthJC
RthCS
TO-247
Characteristic Values
Min.
Typ. Max.
23 38
S
4735
880
90
pF
pF
pF
0.12
Ω
33 ns
14 ns
38 ns
9 ns
98 nC
34 nC
47 nC
0.15 °C/W
0.21 °C/W
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
IS VGS = 0V
ISM Repetitive, Pulse Width Limited by TJM
VSD IF = IS, VGS = 0V, Note 1
trr
IRM
QRM
IF = 35A, -di/dt = 100A/μs
VR = 100V, VGS = 0V
Characteristic Values
Min. Typ.
Max.
70 A
280 A
1.4 V
250 ns
13.6 A
1.2 μC
IXFT70N30Q3
IXFH70N30Q3
TO-268 Outline
Terminals: 1 - Gate
3 - Source
2,4 - Drain
TO-247 Outline
123
P
e
Note 1. Pulse test, t 300μs, duty cycle, d 2%.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
Terminals: 1 - Gate
3 - Source
2 - Drain
Dim. Millimeter
Min. Max.
A 4.7 5.3
AA12
2.2 2.54
2.2 2.6
b 1.0 1.4
bb12
1.65 2.13
2.87 3.12
C .4 .8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1 4.50
P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185
.087
.059
.209
.102
.098
.040
.065
.113
.055
.084
.123
.016
.819
.610
.031
.845
.640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
Free Datasheet http://www.datasheet4u.com/

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डाउनलोड[ IXFT70N30Q3 Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IXFT70N30Q3Power MOSFETsIXYS
IXYS


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