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HIP0061 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 60V/ 3.5A/ 3-Transistor Common Source ESD Protected Power MOSFET Array - Intersil Corporation

भाग संख्या HIP0061
समारोह 60V/ 3.5A/ 3-Transistor Common Source ESD Protected Power MOSFET Array
मैन्युफैक्चरर्स Intersil Corporation 
लोगो Intersil Corporation लोगो 
पूर्व दर्शन
1 Page
		
<?=HIP0061?> डेटा पत्रक पीडीएफ

HIP0061 pdf
HIP0061
Absolute Maximum Ratings TA = 25oC
Drain to Source Voltage, VDS
(Over Operating Junction and Case Temperature Range) . . . . 60V
Drain to Gate Voltage, VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Gate to Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . .-15, +20V
Pulsed Drain Current, IDM, Each Output,
All Outputs on at VGS = 10V (Notes 1, 2) . . . . . . . . . . . . . . . . 10A
Continuous Source to Drain Diode Current, ISD
at VGS = 10V (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.5A
Continuous Drain Current, IDS, Each Output,
All Outputs on at VGS = 10V (Note 2) . . . . . . . . . . . . . . . . . . 3.5A
Single Pulse Avalanche Energy, EAS (Note 3) . . . . . . . . . . . . 100mJ
Thermal Information
Thermal Resistance (Typical, Note 4)
θJA (oC/W) θJC (oC/W)
SIP-Vertical Package . . . . . . . . . . . . .
55
3
SIP-Gullwing Package . . . . . . . . . . . .
55
3
Maximum
Maximum
Maximum
Junction Temperature, TJ . . .
Storage Temperature Range,
Lead Temperature (Soldering
.....
TSTG
10s) .
.
.
.
.
.
.
.
.
.
.
.
.
......
-55oC
......
..
to
.
150oC
150oC
300oC
Die Characteristics
Back Side Potential . . . . . . . . . . . . . . . . . . . . . . . . . V- (Source, Tab)
Operating Conditions
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . -40oC to 125oC
Drain to Source On-State Voltage Range . . . . . . . . . . . . 5V to 10V
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Pulse width limited by maximum junction temperature.
2. Drain current limited by package construction.
3. VDD = 25V, Start TJ = 25oC, L = 15mH, RGS = 50, IPEAK = 3.5A. See Figures 1, 2, 12, and 13.
4. θJA is measured with the component mounted on an evaluation PC board in free air.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETERS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Forward Gate Current, Drain Short
Circuited to Source
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
BVDSS
ID = 100µA, VGS = 0V
1T2C5=oC-40oC to
60
-
-
V
TC = 25oC
- 70 -
V
VGS(TH)
IDSS
VGS = VDS, ID = 250µA
VDS = 60V
VGS = 0V
TC = 25oC
TC = 125oC
1.8 2.3 2.7
V
- - 1 µA
- - 10 µA
IGSSF VDS = 0V, VGS = 20V
- - 100 nA
Reverse Gate Current, Drain Short
Circuited to Source
Drain to Source On Resistance (Note 5)
Drain to Source On Resistance Matching
Forward Transconductance (Note 5)
Turn-On Delay Time (Note 6)
Rise Time (Note 6)
Turn-Off Delay Time (Note 6)
Fall Time (Note 6)
Total Gate Charge (Note 6)
Gate-Source Charge (Note 6)
Gate-Drain Charge (Note 6)
IGSSR VDS = 0V, VGS = -15V
rDS(ON)
rDS(ON)
gfs
td(ON)
tr
td(OFF)
tf
Qg(TOT)
Qgs
Qgd
VGS = 10V, ID = 3.5A
VGS = 10V, ID = 3.5A
VGS = 5V, ID = 2A
VGS = 5V, ID = 2A
VGS = 10V, ID = 3.5A
TC = 25oC
TC = 125oC
TC = 25oC
TC = 125oC
TC = 25oC
VDS = 10V, ID = 1A
VDD = 30V, RL = 15,
VGS = +10V, ID = 2A, RG = 50
See Figure 14
VDS = 50V, VGS = 10V, ID = 2A
See Figures 16, 17
- - -100 nA
- 0.215 0.265
- 0.365 0.425
- 0.275 0.320
- 0.465 0.5
- 95 - %
- 2.5 - S
- 10
- ns
- 25
- ns
- 18
- ns
- 12 - ns
- 8.0 9.5 nC
- 0.7 1.0 nC
- 3.5 4.0 nC
2

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