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AOD3N50 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel MOSFET - Freescale

भाग संख्या AOD3N50
समारोह N-Channel MOSFET
मैन्युफैक्चरर्स Freescale 
लोगो Freescale लोगो 
पूर्व दर्शन
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<?=AOD3N50?> डेटा पत्रक पीडीएफ

AOD3N50 pdf
AOD3N50/AOU3N50
500V, 3A N-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V, TJ=25°C
ID=250µA, VGS=0V, TJ=150°C
BVDSS
/∆TJ
Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
IDSS Zero Gate Voltage Drain Current
VDS=500V, VGS=0V
VDS=400V, TJ=125°C
IGSS Gate-Body leakage current
VDS=0V, VGS=±30V
VGS(th) Gate Threshold Voltage
VDS=5V,ID=250µA
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=1.5A
gFS Forward Transconductance
VDS=40V, ID=1.5A
VSD Diode Forward Voltage
IS=1A,VGS=0V
IS Maximum Body-Diode Continuous Current
ISM Maximum Body-Diode Pulsed Current
500
600
V
0.54
V/ oC
1
µA
10
±100 nΑ
3.5 4.1 4.5
V
2.3 3
2.8 S
0.78 1
V
3A
9A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=25V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
221 276 331
25 31.4 38
2.1 2.6 4.1
1.9 3.9 5.9
pF
pF
pF
SWITCHING PARAMETERS
Qg Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=400V, ID=3A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
tD(off)
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=250V, ID=3A,
RG=25
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=3A,dI/dt=100A/µs,VDS=100V
Qrr Body Diode Reverse Recovery Charge IF=3A,dI/dt=100A/µs,VDS=100V
6.7 8.0
1.7 3.0
2.7 3.2
11 13.2
19 23.0
20.5 24.6
15 18.0
134 161
0.89 1.1
nC
nC
nC
ns
ns
ns
ns
ns
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in
setting the upper dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C.
G.These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
H. L=60mH, IAS=2A, VDD=150V, RG=10, Starting TJ=25°C
2/6
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