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AOD2908 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel MOSFET - Freescale

भाग संख्या AOD2908
समारोह N-Channel MOSFET
मैन्युफैक्चरर्स Freescale 
लोगो Freescale लोगो 
पूर्व दर्शन
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<?=AOD2908?> डेटा पत्रक पीडीएफ

AOD2908 pdf
AOD2908
100V N-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
IDSS Zero Gate Voltage Drain Current
VDS=100V, VGS=0V
TJ=55°C
IGSS Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th) Gate Threshold Voltage
VDS=VGSID=250µA
ID(ON)
On state drain current
VGS=10V, VDS=5V,PW=260µs
ID(ON)
On state drain current
VGS=10V, VDS=5V,PW=1µs
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=20A
TJ=125°C
gFS Forward Transconductance
VDS=5V, ID=20A
VSD Diode Forward Voltage
IS=1A,VGS=0V
IS Maximum Body-Diode Continuous Current G
100
2.7
120
150
V
1
µA
5
±100 nA
3.3 4.1 V
A
A
11 13.5
m
18 23
30 S
0.7 1 V
70 A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=50V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
1250
727
25
2
1670
970
43
3
pF
pF
pF
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
19 27 nC
Qgs Gate Source Charge
VGS=10V, VDS=50V, ID=20A
5.5 nC
Qgd Gate Drain Charge
6 nC
tD(on)
Turn-On DelayTime
7.5 ns
tr Turn-On Rise Time
VGS=10V, VDS=50V, RL=2.5,
14 ns
tD(off)
Turn-Off DelayTime
RGEN=3
15 ns
tf Turn-Off Fall Time
14 ns
trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs
39 ns
Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
140 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current limited by package.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
I: The IDM is obtained using 260µs pulses.
J: The IDM is obtained using 1µs pulses.
2/6
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