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IGP30N60T डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - IGBT - Infineon

भाग संख्या IGP30N60T
समारोह IGBT
मैन्युफैक्चरर्स Infineon 
लोगो Infineon लोगो 
पूर्व दर्शन
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<?=IGP30N60T?> डेटा पत्रक पीडीएफ

IGP30N60T pdf
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Thermal resistance,
junction – ambient
TrenchStop®Series
IGP30N60T
IGW30N60T
Symbol
Conditions
RthJC
RthJA
PG-TO-220-3-1
PG-TO-247-3-21
Max. Value
0.80
62
40
Unit
K/W
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
Integrated gate resistor
V(BR)CES
VCE(sat)
VGE(th)
ICES
IGES
gfs
RGint
VGE=0V, IC=0.2mA
VGE = 15V, IC=30A
Tj=25°C
Tj=175°C
IC=0.43mA,
VCE=VGE
VCE=600V,
VGE=0V
Tj=25°C
Tj=175°C
VCE=0V,VGE=20V
VCE=20V, IC=30A
min.
600
-
-
4.1
-
-
-
-
Value
typ.
-
1.5
1.9
4.9
-
-
-
16.7
-
max. Unit
-V
2.05
-
5.7
µA
40
1000
100
-
nA
S
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Ciss
Coss
Crss
QGate
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current1)
LE
IC(SC)
VCE=25V,
VGE=0V,
f=1MHz
VCC=480V, IC=30A
VGE=15V
PG-TO-220-3-1
PG-TO-247-3-21
VGE=15V,tSC5µs
VCC = 400V,
Tj = 150°C
-
-
-
-
-
-
-
1630
108
50
167
7
13
275
- pF
-
-
- nC
- nH
-
-A
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
2
Rev. 2.6 Nov. 09
Free Datasheet http://www.datasheet4u.com/

विन्यास 13 पेज
डाउनलोड[ IGP30N60T Datasheet.PDF ]


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