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APT30SCD65B डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Zero Recovery Silicon Carbide Schottky Diode - Microsemi

भाग संख्या APT30SCD65B
समारोह Zero Recovery Silicon Carbide Schottky Diode
मैन्युफैक्चरर्स Microsemi 
लोगो Microsemi लोगो 
पूर्व दर्शन
1 Page
		
<?=APT30SCD65B?> डेटा पत्रक पीडीएफ

APT30SCD65B pdf
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
RθJC
Junction-to-Case Thermal Resistance
WT Package Weight
Min
Torque Maximum Mounting Torque
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
APT30SCD65B
Typ Max Unit
0.8 °C/W
0.22 oz
5.9 g
10 lb·in
1.1 N·m
TYPICAL PERFORMANCE CURVES
0.9
0.8 D = 0.9
0.7
0.6 0.7
0.5
0.5
0.4
Note :
0.3 0.3
t1
0.2
0.1 0.1
0.05
SINGLE PULSE
t2
Duty Factor D = t1/t2
Peak T J = P DM x Z θJC + T C
0
10-5
10-4
10-3
10-2
0.1
1
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
60
50
TJ = 25°C
40
30 TJ = -55°C
20
TJ = 125°C
TJ = 150°C
10
0
01
234
VF, ANODE-TO-CATHODE VOLTAGE (V)
FIGURE 2, Forward Current vs. Forward Voltage
50
45
40
35
30
25
20
15
10
5
0
25 50 75 100 125 150
Case Temperature (°C)
FIGURE 3, Maximum Forward Current vs. Case Temperature
Free Datasheet http://www.datasheet4u.com/

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डाउनलोड[ APT30SCD65B Datasheet.PDF ]


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भाग संख्याविवरणविनिर्माण
APT30SCD65BZero Recovery Silicon Carbide Schottky DiodeMicrosemi
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