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AP630GP डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-CHANNEL ENHANCEMENT MODE POWER MOSFET - Advanced Power Electronics

भाग संख्या AP630GP
समारोह N-CHANNEL ENHANCEMENT MODE POWER MOSFET
मैन्युफैक्चरर्स Advanced Power Electronics 
लोगो Advanced Power Electronics लोगो 
पूर्व दर्शन
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<?=AP630GP?> डेटा पत्रक पीडीएफ

AP630GP pdf
AP630GP
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA
Static Drain-Source On-Resistance VGS=10V, ID=5A
Gate Threshold Voltage
VDS=VGS, ID=250uA
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=150oC)
Gate-Source Forward Leakage
Total Gate Charge3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time3
Rise Time
Turn-off Delay Time
Fall Time
VDS=10V, ID=5A
VDS=200V, VGS=0V
VDS=160V, VGS=0V
VGS= ± 30V
ID= 9A
VDS=160V
VGS=10V
VDD=100V
ID= 9A
RG=10Ω,VGS=10V
RD=11Ω
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V
VDS=25V
f=1.0MHz
200 -
-
- 0.248 -
- - 400
2-4
- 40 -
- - 10
- - 100
- - ±100
- 25 -
- 3.6 -
- 14 -
-8-
- 26 -
- 34 -
- 22 -
- 515 -
- 90 -
- 40 -
V
V/
mΩ
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Source-Drain Diode
Symbol
Parameter
IS Continuous Source Current ( Body Diode )
ISM Pulsed Source Current ( Body Diode )1
VSD Forward On Voltage3
Test Conditions
VD=VG=0V , VS=1.3V
Tj=25, IS=9A, VGS=0V
Min. Typ. Max. Units
- - 9A
- - 36 A
- - 1.3 V
Notes:
1.Pulse width limited by safe operating area.
2.Starting Tj=25oC , VDD=50V , L=4.5mH , RG=25Ω , IAS=9A.
3.Pulse width <300us , duty cycle <2%.
Free Datasheet http://www.datasheet4u.com/

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डाउनलोड[ AP630GP Datasheet.PDF ]


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