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IXKH47N60C डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - IXYS

भाग संख्या IXKH47N60C
समारोह Power MOSFET
मैन्युफैक्चरर्स IXYS 
लोगो IXYS लोगो 
पूर्व दर्शन
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<?=IXKH47N60C?> डेटा पत्रक पीडीएफ

IXKH47N60C pdf
Source-Drain Diode
Symbol Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
IS VGS = 0 V
VSD IF = 40 A; VGS = 0 V
trr
QRM IF = 40 A; -diF/dt = 100 A/µs; VR = 640 V
IRM
A
V
ns
µC
A
Component
Symbol Conditions
TVJ operating
Tstg
Md mounting torque
Maximum Ratings
-55...+150
-55...+150
°C
°C
1.13 Nm
Symbol Conditions
RthCH
Weight
with heatsink compound
Characteristic Values
min. typ. max.
tbd K/W
2.7 g
TO-247 Outline
IXKH 47N60C
Symbol
A
A1
A2
D
E
E2
e
L
L1
ØP
Q
S
b
b2
b4
c
D1
D2
E1
ØP1
Inches
min max
0.185 0.209
0.087 0.102
0.059 0.098
0.819 0.845
0.610 0.640
0.170 0.216
0.215 BSC
0.780 0.800
- 0.177
0.140 0.144
0.212 0.244
0.242 BSC
0.039 0.055
0.065 0.094
0.102 0.135
0.015 0.035
0.515
-
0.020 0.053
0.530
-
- 0.291
Millimeters
min max
4.70
5.30
2.21
2.59
1.50
2.49
20.79 21.45
15.48 16.24
4.31
5.48
5.46 BSC
19.80 20.30
- 4.49
3.55
3.65
5.38
6.19
6.14 BSC
0.99
1.40
1.65
2.39
2.59
3.43
0.38
0.89
13.07
-
0.51
1.35
13.45
-
- 7.39
IXYS reserves the right to change limits, test conditions and dimensions.
© 2008 IXYS All rights reserved
20080523a
2-4
Free Datasheet http://www.datasheet4u.com/

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डाउनलोड[ IXKH47N60C Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IXKH47N60CPower MOSFETIXYS
IXYS


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