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IXGR72N60B3H1 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - IGBT - IXYS

भाग संख्या IXGR72N60B3H1
समारोह IGBT
मैन्युफैक्चरर्स IXYS 
लोगो IXYS लोगो 
पूर्व दर्शन
1 Page
		
<?=IXGR72N60B3H1?> डेटा पत्रक पीडीएफ

IXGR72N60B3H1 pdf
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
gfs IC = 50A, VCE = 10V, Note 1
Cies
Coes
Cres
VCE = 25V, VGE = 0V, f = 1MHz
Qg
Qge IC = 60A, VGE = 15V, VCE = 0.5 VCES
Qgc
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive load, TJ = 25°C
IC = 50A, VGE = 15V
VCE = 480V, RG = 3
Note 2
td(on)
tri
Eon
td(off)
tfi
Eoff
RthJC
RthCS
Inductive load, TJ = 125°C
IC = 50A, VGE = 15V
VCE = 480V, RG = 3
Note 2
Characteristic Values
Min. Typ. Max.
45 76
S
6800
576
80
pF
pF
pF
225 nC
40 nC
82 nC
31 ns
33 ns
1.4 mJ
152 240 ns
92 150 ns
1.0 2.0 mJ
29 ns
34 ns
2.7 mJ
228 ns
142 ns
2.2 mJ
0.62 C/W
0.15 C/W
Reverse Diode (FRED)
(Symbol Test Conditions
(TJ = 25C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
VF IF = 60A, VGE = 0V, Note 1
1.6 2.3 V
TJ = 150°C
1.4 1.8 V
IRM IF = 60A, VGE = 0V,
TJ = 100°C
8.3
trr
I-Fdi=F/d6t0=A,2-0d0i/Adt/μ=s,2V00R A=/μ3s0,0VVR = 300V, TJ = 100°C
140
A
ns
RthJC
0.80 °C/W
IXGR72N60B3H1
ISOPLUS247 (IXGR) Outline
1 - Gate
2 - Collector
3 - Emitter
Notes:
1. Pulse test, t 300μs, duty cycle, d 2%.
2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592
by one or moreof the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
Free Datasheet http://www.datasheet4u.com/

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डाउनलोड[ IXGR72N60B3H1 Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IXGR72N60B3H1IGBTIXYS
IXYS


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