DataSheet.in

IRFHM9331PBF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - HEXFET Power MOSFET - International Rectifier

भाग संख्या IRFHM9331PBF
समारोह HEXFET Power MOSFET
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
1 Page
		
<?=IRFHM9331PBF?> डेटा पत्रक पीडीएफ

IRFHM9331PBF pdf
IRFHM9331PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
BVDSS
ΔΒVDSS/ΔTJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
-30
–––
–––
–––
VGS(th)
Gate Threshold Voltage
-1.3
ΔVGS(th)
IDSS
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
–––
–––
–––
IGSS Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
gfs Forward Transconductance
hQg Total Gate Charge
hQg Total Gate Charge
hQgs Gate-to-Source Charge
hQgd Gate-to-Drain Charge
hRG Gate Resistance
td(on)
Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Avalanche Characteristics
16
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Parameter
dEAS Single Pulse Avalanche Energy
™IAR Avalanche Current
Diode Characteristics
Parameter
Min.
IS Continuous Source Current
(Body Diode)
–––
ISM Pulsed Source Current
Ù(Body Diode)
–––
VSD Diode Forward Voltage
–––
trr Reverse Recovery Time
–––
Qrr Reverse Recovery Charge
Thermal Resistance
–––
Parameter
gRθJC
Junction-to-Case
fRθJA Junction-to-Ambient
fRθJA Junction-to-Ambient (t<10s)
Typ.
–––
0.02
10.0
11.7
-1.8
-5.1
–––
–––
–––
–––
–––
16
32
4.4
8
16
11
27
72
60
1543
310
208
Typ.
–––
–––
–––
64
25
Max.
–––
–––
–––
14.6
-2.4
–––
-1.0
-150
-10
10
–––
–––
48
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Units
Conditions
V
V/°C
mΩ
VGS = 0V, ID = -250μA
Reference to 25°C, ID = -1mA
eVGS = -20V, ID = -11A
eVGS = -10V, ID = -11A
V
mV/°C
μA
μA
S
nC
nC
VDS = VGS, ID = -25μA
VDS = -24V, VGS = 0V
VDS = -24V, VGS = 0V, TJ = 125°C
VGS = -25V
VGS = 25V
VDS = -10V, ID = -9.0A
VDS = -15V,VGS = -4.5V,ID = - 9.0A
VGS = -10V
VDS = -15V
ID = -9.0A
Ω
eVDD = -15V, VGS = -4.5V
ns
ID = -1.0A
RG = 6.8Ω
See Figs. 19a & 19b
VGS = 0V
pF VDS = -25V
ƒ = 1.0KHz
Typ.
–––
–––
Max.
76
-9.0
Units
mJ
A
Max.
-2.8
-90
-1.2
96
38
Units
A
V
ns
nC
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
eTJ = 25°C, IS = -2.8A, VGS = 0V
TJ = 25°C, IF = -2.8A, VDD = -24V
edi/dt = 100/μs
Typ.
–––
–––
Max.
6
45
30
Units
°C/W
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Starting TJ = 25°C, L = 1.904mH, RG = 50Ω, IAS = -9A.
ƒ Pulse width 400μs; duty cycle 2%.
„ When mounted on 1 inch square copper board.
… Rθ is measured at TJ of approximately 90°C.
† For DESIGN AID ONLY, not subject to production testing.
‡ Current limited by package.
.
2 www.irf.com © 2013 International Rectifier
Submit Datasheet Feedback
December 16, 2013

विन्यास 8 पेज
डाउनलोड[ IRFHM9331PBF Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IRFHM9331PBFHEXFET Power MOSFETInternational Rectifier
International Rectifier


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English