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IRFHM8363PBF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - HEXFET Power MOSFET - International Rectifier

भाग संख्या IRFHM8363PBF
समारोह HEXFET Power MOSFET
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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IRFHM8363PBF pdf
IRFHM8363PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
∆ΒVDSS/TJ
RDS(on)
VGS(th)
VGS(th)
IDSS
IGSS
gfs
Qg
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
30
–––
–––
–––
1.35
–––
–––
–––
–––
–––
20
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.022
12.2
16.3
1.8
-6.3
–––
–––
–––
–––
–––
15
6.7
2.1
1.0
2.0
1.6
3.0
7.6
1.6
14
94
12
33
1165
260
100
–––
–––
14.9
20.4
2.35
–––
1.0
150
100
-100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
V VGS = 0V, ID = 250µA
V/°C
m
Reference to 25°C, ID = 1.0mA
eVGS = 10V, ID = 10A
eVGS = 4.5V, ID = 8.0A
V
mV/°C
VDS
=
VGS,
ID
=
25µA
µA
VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
nA
VGS = 20V
VGS = -20V
S VDS = 10V, ID = 10A
nC VGS = 10V, VDS = 15V, ID = 10A
VDS = 15V
nC
VGS = 4.5V
ID = 10A
nC VDS = 24V, VGS = 0V
VDD = 15V, VGS = 4.5V
ns
ID = 10A
RG=1.8
VGS = 0V
pF VDS = 10V
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
dEAS Single Pulse Avalanche Energy
™IAR Avalanche Current
Typ.
–––
–––
Max.
29
10
Units
mJ
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
i––– ––– 10
––– ––– 116
––– –––
––– 17
––– 24
1.3
26
36
MOSFET symbol
D
A
showing the
integral reverse
G
p-n junction diode.
S
eV TJ = 25°C, IS = 10A, VGS = 0V
ns TJ = 25°C, IF = 10A, VDD = 15V
nC di/dt = 280A/µs
Time is dominated by parasitic Inductance
Thermal Resistance
RθJC (Bottom)
RθJC (Top)
RθJA
RθJA (<10s)
fJunction-to-Case
fJunction-to-Case
gJunction-to-Ambient
gJunction-to-Ambient
Parameter
Typ.
–––
–––
–––
–––
Max.
6.7
72
47
32
Units
°C/W
2 www.irf.com © 2013 International Rectifier
May 13, 2013
Free Datasheet http://www.datasheet4u.com/

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डाउनलोड[ IRFHM8363PBF Datasheet.PDF ]


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भाग संख्याविवरणविनिर्माण
IRFHM8363PBFHEXFET Power MOSFETInternational Rectifier
International Rectifier


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