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DMP2305U डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - P-CHANNEL ENHANCEMENT MODE MOSFET - TY Semiconductor

भाग संख्या DMP2305U
समारोह P-CHANNEL ENHANCEMENT MODE MOSFET
मैन्युफैक्चरर्स TY Semiconductor 
लोगो TY Semiconductor लोगो 
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<?=DMP2305U?> डेटा पत्रक पीडीएफ

DMP2305U pdf
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5)
Steady
State
Pulsed Drain Current (Note 6)
TA = 25°C
TA = 70°C
Symbol
VDSS
VGSS
ID
IDM
Product specification
DMP2305U
Value
-20
±8
-4.2
-3.4
-10
Units
V
V
A
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient @TA = 25°C
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Value
1.4
90
-55 to +150
Unit
W
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 7)
Symbol Min
Typ
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
TJ = 25°C
BVDSS
IDSS
IGSS
-20
Gate Threshold Voltage
VGS(th)
-0.5
-
45
Static Drain-Source On-Resistance
RDS (ON)
60
87
Forward Transfer Admittance
DYNAMIC CHARACTERISTICS
|Yfs|
9
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
SWITCHING CHARACTERISTICS
Ciss 727
Coss
69
Crss
64
RG 23
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Qg 7.6
Qgs 1.4
Qgd 1.2
tD(on) 14.0
tr 13.0
tD(off) 53.8
tf 23.2
Notes:
3. Device mounted on FR-4 PCB with 2oz. Copper and test pulse width t 10s.
4. Repetitive rating, pulse width limited by junction temperature.
5. Short duration pulse test used to minimize self-heating effect.
Max
-1.0
±100
-0.9
60
90
113
Unit Test Condition
V VGS = 0V, ID = -250μA
μA VDS = -20V, VGS = 0V
nA VGS = ±8V, VDS = 0V
V VDS = VGS, ID = -250μA
VGS = -4.5V, ID = -4.2A
mVGS = -2.5V, ID = -3.4A
VGS = -1.8V, ID = -2.0A
S VDS = -5V, ID = -4A
pF
pF VDS = -20V, VGS = 0V
f = 1.0MHz
pF
VGS = 0V, VDS = 0V, f = 1.0MHz
nC
nC VGS = -4.5V, VDS = -4V, ID = -3.5A
nC
ns
ns VDS = -4V, VGS = -4.5V,
ns RL = 4Ω, RG = 6Ω, ID = -1A
ns
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