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DMP2160UW डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - P-CHANNEL ENHANCEMENT MODE MOSFET - TY Semiconductor

भाग संख्या DMP2160UW
समारोह P-CHANNEL ENHANCEMENT MODE MOSFET
मैन्युफैक्चरर्स TY Semiconductor 
लोगो TY Semiconductor लोगो 
पूर्व दर्शन
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<?=DMP2160UW?> डेटा पत्रक पीडीएफ

DMP2160UW pdf
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 5)
Pulsed Drain Current
Characteristic
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
IDM
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Product specification
DMP2160UW
Value
-20
±12
-1.5
-1.2
-10
Units
V
V
A
A
Value
350
360
-55 to +150
Units
mW
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
TJ = +25°C
Symbol
BVDSS
IDSS
IGSS
VGS(th)
Static Drain-Source On-Resistance
RDS(ON)
Min
-20
-0.4
Typ
-0.6
75
90
120
Forward Transconductance
Diode Forward Voltage (Note 6)
DYNAMIC CHARACTERISTICS
gFS
VSD
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
Notes:
3. Device mounted on 1in2 FR-4 PCB with 2 oz. Copper. t 10 sec.
4. Short duration pulse test used to minimize self-heating effect.
4
627
64
53
Max
-1.0
±100
±800
-0.9
100
120
160
-1.0
Unit Test Condition
V VGS = 0V, ID = -250µA
µA VDS = -20V, VGS = 0V
nA
VGS = ±8V, VDS = 0V
VGS = ±12V, VDS = 0V
V VDS = VGS, ID = -250µA
VGS = -4.5V, ID = -1.5A
mVGS = -2.5V, ID = -1.2A
VGS = -1.8V, ID = -1A
S VDS = -10V, ID = -1.5A
V VGS = 0V, IS = -1.0A
pF
pF
VDS = -10V, VGS = 0V
f = 1.0MHz
pF
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sales@twtysemi.com
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