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DMP2130L डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - P-CHANNEL ENHANCEMENT MODE MOSFET - TY Semiconductor

भाग संख्या DMP2130L
समारोह P-CHANNEL ENHANCEMENT MODE MOSFET
मैन्युफैक्चरर्स TY Semiconductor 
लोगो TY Semiconductor लोगो 
पूर्व दर्शन
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<?=DMP2130L?> डेटा पत्रक पीडीएफ

DMP2130L pdf
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 5) Continuous
Pulsed Drain Current (Note 6)
Body-Diode Continuous Current (Note 5)
TA = 25°C
TA = 70°C
Symbol
VDSS
VGSS
ID
IDM
IS
Product specification
DMP2130L
Value
-20
±12
-3.0
-2.4
-15
2.0
Unit
V
V
A
A
A
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5); Steady-State
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Value
1.4
90
-55 to +150
Unit
W
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
STATIC PARAMETERS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
On State Drain Current (Note 7)
Symbol
TJ = 25°C
BVDSS
IDSS
IGSS
VGS(th)
ID (ON)
Static Drain-Source On-Resistance (Note 7)
RDS (ON)
Min
-20
-0.6
-15
Typ Max
⎯⎯
-1
⎯ ±100
-1.25
⎯⎯
51 75
87 110
99 125
Forward Transconductance (Note 7)
Diode Forward Voltage (Note 7)
Maximum Body-Diode Continuous Current (Note 5)
DYNAMIC PARAMETERS (Note 8)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
gFS 7.3
VSD 0.79 -1.26
IS ⎯ ⎯ 1.7
Qg 7.3
Qgs 2.0
Qgd 1.9
tD(on)
12
tr 20
tD(off)
38
tf 41
Ciss 443
Coss 128
Crss 101
Notes:
3. Device mounted on 1"x1", FR-4 PC board with 2 oz. Copper and test pulse width t 10s.
4. Repetitive Rating, pulse width limited by junction temperature.
5. Test pulse width t = 300μs.
6. Guaranteed by design. Not subject to production testing.
Unit Test Condition
V ID = -250μA, VGS = 0V
μA VDS = -20V, VGS = 0V
nA VDS = 0V, VGS = ±12V
V VDS = VGS, ID = -250μA
A VGS = -4.5V, VDS = -5V
VGS = -4.5V, ID = -3.5A
mΩ VGS = -2.7V, ID = -3.0A
VGS = -2.5V, ID = -2.6A
S VDS = -10V, ID = -3.0A
V IS = -1.7A, VGS = 0V
A
nC VGS = -4.5V, VDS = -10V, ID = -3.0A
nC VGS = -4.5V, VDS = -10V, ID = -3.0A
nC VGS = -4.5V, VDS = -10V, ID = -3.0A
ns
ns VDS = -10V, VGS = -4.5V,
ns RL = 10Ω, RG = 6Ω
ns
pF
pF
VDS = -16V, VGS = 0V
f = 1.0MHz
pF
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