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DMP2123L डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR - TY Semiconductor

भाग संख्या DMP2123L
समारोह P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
मैन्युफैक्चरर्स TY Semiconductor 
लोगो TY Semiconductor लोगो 
पूर्व दर्शन
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<?=DMP2123L?> डेटा पत्रक पीडीएफ

DMP2123L pdf
Product specification
DMP2123L
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
STATIC PARAMETERS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
On State Drain Current (Note 5)
Symbol
TJ = 25°C
BVDSS
IDSS
IGSS
VGS(th)
ID (ON)
Static Drain-Source On-Resistance (Note 5)
RDS (ON)
Forward Transconductance (Note 5)
Diode Forward Voltage (Note 5)
Maximum Body-Diode Continuous Current (Note 1)
DYNAMIC PARAMETERS (Note 6)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
gFS
VSD
IS
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
Ciss
Coss
Crss
Notes:
4. Test pulse width t = 300μs.
5. Guaranteed by design. Not subject to production testing.
Min
-20
-0.6
-15
Typ
51
87
99
7.3
0.79
7.3
2.0
1.9
12
20
38
41
443
128
101
Max
-1
±100
-1.25
72
108
123
-1.26
1.7
Unit Test Condition
V ID = -250μA, VGS = 0V
μA VDS = -20V, VGS = 0V
nA VDS = 0V, VGS = ±12V
V VDS = VGS, ID = -250μA
A VGS = -4.5V, VDS = -5V
VGS = -4.5V, ID = -3.5A
mΩ VGS = -2.7V, ID = -3.0A
VGS = -2.5V, ID = -2.6A
S VDS = -10V, ID = -3.0A
V IS = -1.7A, VGS = 0V
A
nC VGS = -4.5V, VDS = -10V, ID = -3.0A
nC VGS = -4.5V, VDS = -10V, ID = -3.0A
nC VGS = -4.5V, VDS = -10V, ID = -3.0A
ns
ns VDS = -10V, VGS = -4.5V,
ns RL = 10Ω, RG = 6Ω
ns
pF
pF
VDS = -16V, VGS = 0V
f = 1.0MHz
pF
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