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81RIA40MPBF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Phase Control Thyristors - Vishay Siliconix

भाग संख्या 81RIA40MPBF
समारोह Phase Control Thyristors
मैन्युफैक्चरर्स Vishay Siliconix 
लोगो Vishay Siliconix लोगो 
पूर्व दर्शन
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81RIA40MPBF pdf
80RIA...PbF/81RIA...PbF Series
Vishay High Power Products Phase Control Thyristors
(Stud Version), 80 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average on-state current
at case temperature
IT(AV)
Maximum RMS on-state current
IT(RMS)
Maximum peak, one-cycle
non-repetitive surge current
ITSM
Maximum I2t for fusing
I2t
Maximum I2t for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value of on-state slope resistance
High level value of on-state slope resistance
Maximum on-state voltage
Maximum holding current
Typical latching current
I2t
VT(TO)1
VT(TO)2
rt1
rt2
VTM
IH
IL
TEST CONDITIONS
180° conduction, half sine wave
DC at 75 °C case temperature
t = 10 ms
t = 8.3 ms
No voltage
reapplied
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
100 % VRRM
reapplied
No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
t = 10 ms
t = 8.3 ms
100 % VRRM
reapplied
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum
(I > π x IT(AV)), TJ = TJ maximum
(16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum
(I > π x IT(AV)), TJ = TJ maximum
Ipk = 250 A, TJ = 25 °C, tp = 10 ms sine pulse
TJ = 25 °C, anode supply 12 V resistive load
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VALUES
80
85
125
1900
1990
1600
1675
18
16
12.7
11.7
180.5
0.99
1.13
2.29
1.84
1.60
200
400
UNITS
A
°C
A
kA2s
kA2s
V
mΩ
V
mA
SWITCHING
PARAMETER
Maximum non-repetitive rate of
rise of turned-on current
Typical delay time
Typical turn-off time
SYMBOL
dI/dt
td
tq
TEST CONDITIONS
TJ = 125 °C, Vd = Rated VDRM, ITM = 2 x dI/dt snubber
0.2 µF, 15 Ω, gate pulse: 20 V, 65 Ω, tp = 6 µs, tr = 0.5 µs
Per JEDEC standard RS-397, 5.2.2.6.
Gate pulse: 10 V, 15 Ω source, tp = 6 µs, tr = 0.1 µs,
Vd = Rated VDRM, ITM = 50 Adc, TJ = 25 °C
ITM = 50 A, TJ = TJ maximum, dI/dt = - 5 A/µs, VR = 50
V, dV/dt = 20 V/µs, gate bias: 0 V 25 Ω, tp = 500 µs
VALUES
300
1
110
UNITS
A/µs
µs
BLOCKING
PARAMETER
Maximum critical rate of rise of
off-state voltage
Maximum peak reverse and
off-state leakage current
SYMBOL
dV/dt
IRRM,
IDRM
TEST CONDITIONS
TJ = 125 °C exponential to 67 % rated VDRM
TJ = 125 °C rated VDRM/VRRM applied
VALUES UNITS
500 V/µs
15 mA
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2
For technical questions, contact: ind-modules@vishay.com
Document Number: 94392
Revision: 11-Aug-08
Datasheet pdf - http://www.DataSheet4U.co.kr/

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81RIA40MPBFPhase Control ThyristorsVishay Siliconix
Vishay Siliconix


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