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IFRP460 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - IXYS

भाग संख्या IFRP460
समारोह Power MOSFET
मैन्युफैक्चरर्स IXYS 
लोगो IXYS लोगो 
पूर्व दर्शन
1 Page
		
<?=IFRP460?> डेटा पत्रक पीडीएफ

IFRP460 pdf
IRFP 460
Symbol
g
fs
Ciss
C
oss
Crss
td(on)
tr
t
d(off)
tf
Qg(on)
Q
gs
Qgd
R
thJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
V = 10 V; I = 12 A, pulse test
DS D
V = 0 V, V = 25 V, f = 1 MHz
GS DS
VGS = 10 V, VDS = 250 V, ID = 20 A
R
G
=
4.3
Ω,
(External)
V = 10 V, V = 200 V, I = 20 A
GS DS D
13 21
S
4200
450
135
pF
pF
pF
23 35
81 120
85 130
65 98
ns
ns
ns
ns
135 210
28 40
62 110
nC
nC
nC
0.45 K/W
0.25 K/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
IS VGS = 0 V
20 A
ISM Repetitive; pulse width limited by TJM
www.DataSheet.net/
80 A
VSD IF = 20 A, VGS = 0 V,
Pulse test, t 300 µs, duty cycle d 2 %
1.8 V
trr IF = 20 A, -di/dt = 100 A/µs, VR = 100 V
Q
rr
570 860 ns
5.7 µC
TO-247 AD Outline
123
Terminals: 1 - Gate
2 - Drain
3 - Source Tab - Drain
Dim. Millimeter
Min. Max.
A 4.7 5.3
A1 2.2 2.54
A2 2.2 2.6
b 1.0 1.4
b1 1.65 2.13
b2 2.87 3.12
C .4 .8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1 4.50
P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-4
Datasheet pdf - http://www.DataSheet4U.co.kr/

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शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IFRP460Power MOSFETIXYS
IXYS


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