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IXGT20N140C3H1 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - GenX3 1400V IGBTs - IXYS

भाग संख्या IXGT20N140C3H1
समारोह GenX3 1400V IGBTs
मैन्युफैक्चरर्स IXYS 
लोगो IXYS लोगो 
पूर्व दर्शन
1 Page
		
<?=IXGT20N140C3H1?> डेटा पत्रक पीडीएफ

IXGT20N140C3H1 pdf
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
gfs IC = IC100, VCE = 10V, Note 1
Cies
Coes
Cres
VCE = 25V, VGE = 0V, f = 1MHz
Qg
Qge IC = IC100, VGE = 15V, VCE = 0.5 VCES
Qgc
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive load, TJ = 25°C
IC = IC100, VGE = 15V
VCE = 0.5 VCES, RG = 5Ω
Note 2
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive load, TJ = 125°C
IC = IC100, VGE = 15V
VCE = 0.5 VCES, RG = 5Ω
Note 2
RthJC
RthCK
TO-247
Characteristic Values
Min. Typ. Max.
10 17
S
1790
145
50
pF
pF
pF
88 nC
18 nC
30 nC
19 ns
12 ns
1.35 mJ
110 ns
32 ns
0.44 0.80 mJ
22 ns
13 ns
2.33 mJ
144 ns
380 ns
1.64 mJ
0.50 °C/W
0.21 °C/W
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Reverse Diode (FRED)
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
VF IF = 20A, VGE = 0V, Note 1
IRM
trr
RthJC
IF = 20A, VGE = 0V,
-diF/dt = 750A/μs, VR = 800V
TJ = 125°C
Characteristic Values
Min. Typ. Max.
3.0
2.8
19
V
V
A
70 ns
0.9 °C/W
Notes:
1. Pulse test, t 300μs, duty cycle, d 2%.
2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXGH20N140C3H1
IXGT20N140C3H1
TO-247 Outline
123
P
Terminals: 1 - Gate
3 - Emitter
Dim. Millimeter
Min. Max.
A 4.7 5.3
AA12
2.2 2.54
2.2 2.6
b 1.0 1.4
b1 1.65 2.13
b2 2.87 3.12
C .4 .8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1 4.50
P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
2 - Collector
Inches
Min. Max.
.185
.087
.059
.209
.102
.098
.040
.065
.113
.055
.084
.123
.016
.819
.610
.031
.845
.640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-268 Outline
Terminals: 1 - Gate
3 - Emitter
2 & 4 - Collector
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
Datasheet pdf - http://www.DataSheet4U.net/

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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IXGT20N140C3H1GenX3 1400V IGBTsIXYS
IXYS


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