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DMP2066UFDE डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - P-CHANNEL ENHANCEMENT MODE MOSFET - Diodes

भाग संख्या DMP2066UFDE
समारोह P-CHANNEL ENHANCEMENT MODE MOSFET
मैन्युफैक्चरर्स Diodes 
लोगो Diodes लोगो 
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DMP2066UFDE pdf
DMP2066UFDE
Maximum Ratings @TA = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 5) VGS = -4.5V
Steady
State
t<5s
Continuous Drain Current (Note 5) VGS = -1.8V
Steady
State
t<5s
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Maximum Continuous Body Diode Forward Current (Note 5)
TA = 25°C
TA = 70°C
TA = 25°C
TA = 70°C
TA = 25°C
TA = 70°C
TA = 25°C
TA = 70°C
Symbol
VDSS
VGSS
ID
ID
ID
ID
IDM
IS
Value
-20
±12
-6.2
-4.9
-7.5
-5.9
-4.2
-3.4
-5.2
-4.1
-25
2.5
Units
V
V
A
A
A
A
A
A
Thermal Characteristics @TA = 25°C unless otherwise specified
Total Power Dissipation (Note 4)
Characteristic
Thermal Resistance, Junction to Ambient (Note 4)
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
Steady state
t<5s
Steady state
t<5s
Symbol
PD
RθJA
PD
RθJA
RθJc
TJ, TSTG
Value
0.66
189
123
2.03
61
40
9.3
-55 to +150
Units
W
°C/W
°C/W
W
°C/W
°C/W
°C/W
°C
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Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS (ON)
|Yfs|
VSD
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
Min
-20
-0.4
Typ
25
33
50
9
-0.7
1537
146
127
10.4
14.4
2.6
2.7
13.7
14.0
79.1
35.5
Max
-1
±100
-1.1
36
56
75
-1.2
Notes:
4. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout
6. Short duration pulse test used to minimize self-heating effect
7. Guaranteed by design. Not subject to production testing.
Unit Test Condition
V VGS = 0V, ID = -250μA
µA VDS = -20V, VGS = 0V
nA VGS = ±12.0V, VDS = 0V
V VDS = VGS, ID = -250μA
VGS = -4.5V, ID = -4.6A
mΩ VGS = -2.5V, ID = -3.8A
VGS = -1.8V, ID = -2.0A
S VDS = -10V, ID = -4.5A
V VGS = 0V, IS = -2.1A
pF
pF
VDS = -10V, VGS = 0V
f = 1.0MHz
pF
Ω VDS = 0V, VGS = 0V, f = 1.0MHz
nC VDS = -10V, VGS = -4.5V
ID = -4.5A
ns
VDD = -10V, VGS = -4.5V, RG = 6,
RL = 10, ID = -1A
DMP2066UFDE
Document number: DS35496 Rev. 4 - 2
2 of 6
www.diodes.com
April 2012
© Diodes Incorporated
Datasheet pdf - http://www.DataSheet4U.net/

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