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IPD088N06N3G डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power-Transistor - Infineon Technologies

भाग संख्या IPD088N06N3G
समारोह Power-Transistor
मैन्युफैक्चरर्स Infineon Technologies 
लोगो Infineon Technologies लोगो 
पूर्व दर्शन
1 Page
		
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IPD088N06N3G pdf
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IPD088N06N3 G
Parameter
Symbol Conditions
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance,
junction - ambient
R thJC
R thJA
minimal footprint
6 cm² cooling area4)
min.
Values
typ.
Unit
max.
- - 2.1 K/W
- - 62
- - 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
V (BR)DSS V GS=0 V, I D=1 mA
V GS(th) V DS=V GS, I D=34 µA
I DSS
V DS=60 V, V GS=0 V,
T j=25 °C
V DS=60 V, V GS=0 V,
T j=125 °C
I GSS
R DS(on)
RG
V GS=20 V, V DS=0 V
V GS=10 V, I D=50 A
g fs
|V DS|>2|I D|R DS(on)max,
I D=50 A
60
2
-
-
-
-
-
29
- -V
34
0.1 1 µA
10 100
1 100 nA
7.1 8.8 m
0.9 -
57 - S
4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 2.0
page 2
2008-11-26
Datasheet pdf - http://www.DataSheet4U.net/

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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IPD088N06N3GPower-TransistorInfineon Technologies
Infineon Technologies


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