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IPD082N10N3G डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power-Transistor - Infineon Technologies

भाग संख्या IPD082N10N3G
समारोह Power-Transistor
मैन्युफैक्चरर्स Infineon Technologies 
लोगो Infineon Technologies लोगो 
पूर्व दर्शन
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IPD082N10N3G pdf
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IPP086N10N3 G IPI086N10N3 G
IPB083N10N3 G IPD082N10N3 G
Parameter
Symbol Conditions
min.
Values
typ.
Unit
max.
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance,
junction - ambient
R thJC
R thJA
minimal footprint
6 cm2 cooling area3)
-
-
-
- 1.2 K/W
- 62
- 50
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
100
-
-V
Gate threshold voltage
V GS(th) V DS=V GS, I D=75 µA 2 2.7 3.5
Zero gate voltage drain current
I DSS
V DS=100 V, V GS=0 V,
T j=25 °C
-
0.1
1 µA
V DS=100 V, V GS=0 V,
T j=125 °C
-
10 100
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
1 100 nA
Drain-source on-state resistance
R DS(on)
V GS=10 V, I D=73 A,
TO 220, TO 262
-
7.4 8.6 m
V GS=10 V, I D=73 A,
TO263
-
7.2 8.3
Gate resistance
V GS=10 V, I D=73 A,
TO 252
-
V GS=6 V, I D=36 A, TO
220, TO 262
-
V GS=6 V, I D=36 A, TO
263
-
V GS=6 V, I D=36 A, TO
252
-
RG -
7 8.2
9.3 15.4
9.0 15.1
8.9 15
1 -
Transconductance
g fs
|V DS|>2|I D|R DS(on)max,
I D=80 A
45
89
-S
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 2.5
page 2
2010-07-16
Datasheet pdf - http://www.DataSheet4U.net/

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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IPD082N10N3GPower-TransistorInfineon Technologies
Infineon Technologies


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