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IXGT72N60A3 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - GenX3 600V IGBT - IXYS Corporation

भाग संख्या IXGT72N60A3
समारोह GenX3 600V IGBT
मैन्युफैक्चरर्स IXYS Corporation 
लोगो IXYS Corporation लोगो 
पूर्व दर्शन
1 Page
		
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IXGT72N60A3 pdf
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Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
gfs IC = 60A, VCE = 10V, Note 1
Cies
Coes
Cres
Qg
Qge
Qgc
VCE = 25V, VGE = 0V, f = 1MHz
IC = IC110, VGE = 15V, VCE = 0.5 • VCES
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive load, TJ = 25°C
IC = 50A, VGE = 15V
VCE = 480V, RG = 3Ω
td(on)
tri
Eon
td(off)
tfi
Eoff
RthJC
RthCS
Inductive load, TJ = 125°C
IC = 50A, VGE = 15V
VCE = 480V, RG = 3Ω
Characteristic Values
Min. Typ. Max.
48 76
S
6600
360
80
230
40
78
pF
pF
pF
nC
nC
nC
31 ns
34 ns
1.38 mJ
320 ns
250 ns
3.5 mJ
29 ns
32 ns
2.6 mJ
510 ns
375 ns
6.5 mJ
0.23 °C/W
0.15 °C/W
IXGH72N60A3
IXGT72N60A3
TO-247 AD Outline
123
Terminals: 1 - Gate
2 - Drain
Dim. Millimeter
Min. Max.
A 4.7 5.3
A1 2.2 2.54
A2 2.2 2.6
b 1.0 1.4
bb12
1.65 2.13
2.87 3.12
C .4 .8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1 4.50
P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040
.065
.113
.055
.084
.123
.016
.819
.610
.031
.845
.640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
TO-268 Outline
Note 1: Pulse test, t 300μs, duty cycle, d 2%.
Terminals: 1 - Gate
2 - Drain
IXYS reserves the right to change limits, test conditions and dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
Datasheet pdf - http://www.DataSheet4U.net/

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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IXGT72N60A3GenX3 600V IGBTIXYS Corporation
IXYS Corporation


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