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EC4409C डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Silicon MOSFET - Sanyo Semicon Device

भाग संख्या EC4409C
समारोह N-Channel Silicon MOSFET
मैन्युफैक्चरर्स Sanyo Semicon Device 
लोगो Sanyo Semicon Device लोगो 
पूर्व दर्शन
1 Page
		
<?=EC4409C?> डेटा पत्रक पीडीएफ

EC4409C pdf
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EC4409C
Continued from preceding page.
Parameter
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=10V, VGS=4V, ID=350mA
VDS=10V, VGS=4V, ID=350mA
VDS=10V, VGS=4V, ID=350mA
IS=350mA, VGS=0V
Ratings
min typ max
Unit
17.5
ns
34.2
ns
104 ns
55.5
ns
0.87
nC
0.39
nC
0.14
nC
0.86
1.2 V
Package Dimensions
unit : mm (typ)
7036-001
Top View
0.8
43
12
Polarity Discriminating Mark
Type No. Indication Electrical Connection
Polarity mark (Top)
KB
Top view
Gate
Source
Drain
*Electrodes : on the bottom
Top view
Polarity mark (Top)
Drain
0.5
0.2
12
43
Bottom View
1 : Gate
2 : Source
3 : Drain
4 : Drain
SANYO : ECSP1008-4
Gate
Source
Switching Time Test Circuit
VIN
4V
0V
VIN
PW=10μs
D.C.1%
G
VDD=15V
ID=200mA
RL=75Ω
D VOUT
Rg
EC4409C
P.G 50Ω S
Rg=1.2kΩ
No. A1197-2/4
Datasheet pdf - http://www.DataSheet4U.net/

विन्यास 4 पेज
डाउनलोड[ EC4409C Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
EC4409CN-Channel Silicon MOSFETSanyo Semicon Device
Sanyo Semicon Device


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