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IRGPS4067DPBF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - INSULATED GATE BIPOLAR TRANSISTOR - International Rectifier

भाग संख्या IRGPS4067DPBF
समारोह INSULATED GATE BIPOLAR TRANSISTOR
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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IRGPS4067DPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max.
V(BR)CES
V(BR)CES/T J
Collector-to-Emitter BreakdownVoltage
T emperatureCoeff. of B reakdownVoltage
600 —
— 0.27
1.70
2.05
VCE(on)
Collector-to-Emitter Saturation Voltage
— 2.15 —
— 2.20 —
VGE(th)
VGE (th)/T J
Gate Threshold Voltage
Threshold Voltage temp. coefficient
4.0 — 6.5
— -17 —
gfe Forward Transconductance
— 77 —
ICES
Collector-to-Emitter Leakage Current
— 1.0 150
— 2.3 —
VFM Diode Forward Voltage Drop
— 2.4 3.0
— 1.9 —
IGES Gate-to-Emitter Leakage Current
— — ±400
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
hMin. Typ. Max.
Qg
Qge
Qgc
Eon
Eoff
Etotal
td(on)
tr
td(off)
tf
Eon
Eoff
Etotal
td(on)
tr
td(off)
tf
Cies
Coes
Cres
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
— 240 360
— 70 105
— 90 135
— 5750 7990
— 3430 4360
— 9180 12350
— 80 100
— 70 125
— 190 220
— 40 60
— 7740 —
— 4390 —
— 12130 —
— 80 —
— 75 —
— 230 —
— 55 —
— 7750 —
— 550 —
— 225 —
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
SCSOA
Short Circuit Safe Operating Area
5 ——
Erec
trr
Irr
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
Peak Reverse Recovery Current
— 500 —
— 130 —
— 36 —
Units
V
V/°C
V
V
mV/°C
S
μA
mA
V
nA
Conditions
eVGE = 0V, IC = 100μA
VGE = 0V, IC = 4.0mA (25°C-175°C)
IC = 120A, VGE = 15V, TJ = 25°C
IC = 120A, VGE = 15V, TJ = 150°C
IC = 120A, VGE = 15V, TJ = 175°C
VCE = VGE, IC = 5.6mA
VCE = VGE, IC = 5.6mA (25°C - 175°C)
VCE = 50V, IC = 120A
VGE = 0V, VCE = 600V
VGE = 0V, VCE = 600V, TJ = 175°C
IF = 120A
IF = 120A, TJ = 175°C
VGE = ±20V
Units
nC
μJ
ns
Conditions
IC = 120A
VGE = 15V
VCC = 400V
IC = 120A, VCC = 400V, VGE = 15V
RG = 4.7, L = 66μH, TJ = 25°C
E nergy los s es include tail & diode revers e recovery
IC = 120A, VCC = 400V, VGE = 15V
RG = 4.7, L = 66μH, TJ = 25°C
IC = 120A, VCC = 400V, VGE=15V
μJ RG=4.7, L=66μH, TJ = 175°C
E nergy los s es include tail & diode revers e recovery
IC = 120A, VCC = 400V, VGE = 15V
ns RG = 4.7, L = 66μH
TJ = 175°C
pF VGE = 0V
VCC = 30V
f = 1.0Mhz
TJ = 175°C, IC = 480A
VCC = 480V, Vp =600V
Rg = 4.7, VGE = +20V to 0V
μs VCC = 400V, Vp =600V
Rg = 4.7, VGE = +15V to 0V
μJ TJ = 175°C
ns VCC = 400V, IF = 120A
A VGE = 15V, Rg = 4.7, L =100μH
Notes:
 VCC = 80% (VCES), VGE = 20V, L = 66μH, RG = 4.7tested in production ILM 400A.
‚ Pulse width limited by max. junction temperature.
ƒ Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
„ Ris measured at TJ of approximately 90°C.
… Calculated continuous current based on maximum allowable junction temperature. Package IGBT current limit is 195A. Package diode current
limit is 120A. Note that current limitations arising from heating of the device leads may occur.
† Maximum limits are based on statistical sample size characterization.
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