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IXGX28N140B3H1 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - GenX3 1400V IGBTs w/ Diode - IXYS Corporation

भाग संख्या IXGX28N140B3H1
समारोह GenX3 1400V IGBTs w/ Diode
मैन्युफैक्चरर्स IXYS Corporation 
लोगो IXYS Corporation लोगो 
पूर्व दर्शन
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IXGX28N140B3H1 pdf
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Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
gfs IC = IC110, VCE = 10V, Note 1
Cies
Coes
Cres
Qg(on)
Qge
Qgc
td(on)
tri
Eon
td(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
RthJC
RthCs
VCE = 25V, VGE = 0V, f = 1 MHz
IC = IC110, VGE = 15V, VCE = 0.5 • VCES
Inductive load, TJ = 25°C
IC = IC110, VGE = 15V
VCE = 960V, RG = 5Ω
Note 3
Inductive load, TJ = 125°C
IC = IC110, VGE = 15V
VCE = 960V, RG = 5Ω
Note 3
IXGH28N140B3H1 IXGK28N140B3H1
IXGX28N140B3H1
Characteristic Values
Min. Typ. Max.
12 19
S
1830
163
46
88
12
38
16
36
3.6
190
360
3.9
16
50
7.3
215
700
6.5
0.21
0.15
pF
pF
pF
nC
nC
nC
ns
ns
mJ
400 ns
ns
6.5 J
ns
ns
mJ
ns
ns
mJ
0.42 °C/W
°C/W
°C/W
Reverse Diode (FRED)
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
VF IF = 20A, VGE = 0V, Note 1
TJ = 150°C
trr IF = 20A, VGE = 0V, -diF/dt = -200A/μs,
IRM
RthJC
VR = 1200V, TJ = 125°C
Characteristic Values
Min. Typ. Max.
3.0 V
2.65 V
350 ns
18.5 A
0.90 °C/W
Notes:
1. Pulse test, t 300μs, duty cycle, d 2%.
2. Part must be heatsunk for high-temp Ices measurement.
3. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
Datasheet pdf - http://www.DataSheet4U.net/

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भाग संख्याविवरणविनिर्माण
IXGX28N140B3H1GenX3 1400V IGBTs w/ DiodeIXYS Corporation
IXYS Corporation


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