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IRFHS9351PBF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - HEXFET Power MOSFET - International Rectifier

भाग संख्या IRFHS9351PBF
समारोह HEXFET Power MOSFET
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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IRFHS9351PBF pdf
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IRFHS9351PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
B VDSS
VDSS/ TJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
-30
–––
–––
–––
V GS(th )
VGS(th)
IDSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
-1. 3
–––
–––
–––
IGSS Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
gfs
Qg
Qg
Qgs
Qgd
RG
td(on )
tr
td(off )
Forward Transconductance
hTotal Gate Charge
hTotal Gate Charge
hGate-to-Source Charge
hGate-to-Drain Charge
hGate R esistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
2. 4
–––
–––
–––
–––
–––
–––
–––
–––
tf Fall Time
Ciss Input Capacitance
–––
–––
Coss Output Capacitance
Crss Reverse Transfer C apacitance
–––
–––
Diode Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Thermal Resistance
R JC (Bottom)
R JC (Top)
R JA
R JA
Parameter
gJu nc tio n-to-Cas e
gJu nc tio n-to-Cas e
fJu nc tio n-to-Ambi ent
fJunction-to-Ambient (t<10s)
Min.
–––
–––
–––
–––
–––
Typ.
–––
0. 02
135
235
-1.8
-4.6
–––
–––
–––
–––
–––
1. 9
3. 7
0. 6
1. 1
17
8. 3
30
6. 3
7. 9
160
39
26
Typ.
–––
–––
–––
20
42
Max.
–––
–––
170
290
-2.4
–––
-1.0
-150
-100
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Units
V
V/ °C
m
V
mV /°C
μA
nA
S
nC
nC
Conditions
VGS = 0V, ID = -250μA
Reference to 25°C, ID = -1mA
eVGS = -10V, ID = -3.1A
eVGS = -4.5V, ID = -2.5A
VDS = VGS, ID = -10μA
VDS = -24V, VGS = 0V
VDS = -24V, VGS = 0V, TJ = 125°C
VGS = -20V
VGS = 20V
VDS = -10V, ID = -3.1A
VDS = -15V,VGS = -4.5V,ID = - 3.1A
VGS = -10V
VDS = -15V
ID = -3.1A
eVDD = -15V, VGS = -4.5V
ns ID = -3.1A
RG = 1.8
See Figs. 19a & 19b
VGS = 0V
pF VDS = -25V
ƒ = 1.0KHz
Max.
-5.1
-20
-1.2
30
63
Units
Conditions
MOSFET symbol
D
showing the
A integral reverse
G
p-n junction diode.
S
eV TJ = 25°C, IS = -3.1A, VG S = 0V
ns TJ = 25°C, IF = -3.1A, VDD = -15V
enC di/dt = 370/μs
Typ.
–––
–––
–––
M ax.
19
1 70
90
75
Units
°C/W
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Current limited by package. .
ƒ Pulse width 400μs; duty cycle 2%.
„ When mounted on 1 inch square copper board.
… Rθ is measured at TJ of approximately 90°C.
† For DESIGN AID ONLY, not subject to production testing.
.
2
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