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IRFHS9301PBF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - HEXFET Power MOSFET - International Rectifier

भाग संख्या IRFHS9301PBF
समारोह HEXFET Power MOSFET
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
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IRFHS9301PBF pdf
IRFHS9301PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
BVDSS
ΔΒVDSS/ΔTJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
-30
–––
–––
–––
VGS(th)
ΔVGS(th)
IDSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
-1.3
–––
–––
–––
IGSS Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
gfs Forward Transconductance
9.3
Qg Total Gate Charge
Qg Total Gate Charge
Qgs Gate-to-Source Charge
Qgd Gate-to-Drain Charge
RG Gate Resistance
td(on)
Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Diode Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ÙISM Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Thermal Resistance
RθJC (Bottom)
RθJC (Top)
RθJA
RθJA
Parameter
gJunction-to-Case
gJunction-to-Case
fJunction-to-Ambient
fJunction-to-Ambient (t<10s)
Min.
–––
–––
–––
–––
–––
Typ.
–––
0.02
30
52
-1.8
-4.8
–––
–––
–––
–––
–––
6.9
13
2.1
3.9
17
12
80
13
25
580
125
79
Typ.
–––
–––
–––
30
110
Max.
–––
–––
37
65
-2.4
–––
-1.0
-150
-100
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Units
V
V/°C
mΩ
V
mV/°C
μA
nA
S
nC
nC
Conditions
VGS = 0V, ID = -250μA
Reference to 25°C, ID = -1mA
eVGS = -10V, ID = -7.8A
eVGS = -4.5V, ID = -6.2A
VDS = VGS, ID = -25μA
VDS = -24V, VGS = 0V
VDS = -24V, VGS = 0V, TJ = 125°C
VGS = -20V
VGS = 20V
VDS = -10V, ID = -7.8A
VDS = -15V,VGS = -4.5V,ID = - 7.8A
VGS = -10V
VDS = -15V
ID = -7.8A
eΩ
VDD = -15V, VGS = -4.5V
ns
ID = -7.8A
RG = 2.0Ω
See Figs. 19a & 19b
VGS = 0V
pF VDS = -25V
ƒ = 1.0KHz
Max.
d-8.5
-52
-1.2
45
170
Units
A
V
ns
nC
Conditions
MOSFET symbol
showing the
D
integral reverse
G
p-n junction diode.
S
eTJ = 25°C, IS = -7.8A, VGS = 0V
eTJ = 25°C, IF = -7.8A, VDD = -15V
di/dt = 280/μs
Typ.
–––
–––
–––
Max.
13
90
60
42
Units
°C/W
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Current limited by package.
ƒ Pulse width 400μs; duty cycle 2%.
„ When mounted on 1 inch square copper board.
… Rθ is measured at TJ of approximately 90°C.
.
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May 21, 2014

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