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IRFHS8342PBF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - HEXFET Power MOSFET - International Rectifier

भाग संख्या IRFHS8342PBF
समारोह HEXFET Power MOSFET
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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IRFHS8342PBF pdf
IRFHS8342PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
BVDSS
ΔΒ VDSS/ΔTJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
VGS(th)
ΔVGS(th)
IDSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
IGSS Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
gfs Forward Transconductance
Qg Total Gate Charge
Qg Total Gate Charge
Qgs Gate-to-Source Charge
Qgd Gate-to-Drain Charge
Qoss Output Charge
RG Gate Resistance
td(on) Turn-On Delay Time
tr Rise Time
td(off) Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Diode Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
Thermal Resistance
RθJC (Bottom)
RθJC (Top)
RθJA
RθJA
gJunction-to-Case
Parameter
gJunction-to-Case
fJunction-to-Ambient
fJunction-to-Ambient (<10s)
Min. Typ. Max. Units
Conditions
30 ––– ––– V VGS = 0V, ID = 250μA
––– 22 ––– mV/°C Reference to 25°C, ID = 1mA
ed––– 13
e––– 20
16
25
mΩ
VGS = 10V, ID = 8.5A
VGS = 4.5V, ID = 6.8A
1.35
–––
1.8
-5.8
2.35
–––
V
mV/°C
VDS
= VGS, ID =
25μA
–––
–––
–––
–––
1.0
150
μA
VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
–––
–––
––– 100
––– -100
nA
VGS = 20V
VGS = -20V
d18 ––– ––– S VDS = 10V, ID = 8.5A
d––– 4.2 ––– nC VGS = 4.5V, VDS = 15V, ID = 8.5A
––– 8.7 –––
VDS = 15V
d––– 1.5 ––– nC VGS = 10V
––– 1.3 –––
ID = 8.5A (See Fig. 6 & 16)
––– 3.0 ––– nC VDS = 16V, VGS = 0V
––– 1.9 ––– Ω
e––– 5.9 –––
VDD = 15V, VGS = 4.5V
d–––
–––
15
5.2
–––
–––
ns
ID = 8.5A
RG=1.8Ω
––– 5.0 –––
See Fig.17
––– 600 –––
VGS = 0V
––– 100 ––– pF VDS = 25V
––– 46 –––
ƒ = 1.0MHz
Min. Typ. Max. Units
Conditions
d––– ––– 8.5
MOSFET symbol
D
––– ––– 76
A
showing the
integral reverse
p-n junction diode.
G
S
d e––– ––– 1.0
V TJ = 25°C, IS = 8.5A , VGS = 0V
d––– 11 17 ns TJ = 25°C, IF = 8.5A , VDD = 15V
––– 13 20 nC di/dt = 330A/μs
Time is dominated by parasitic Inductance
Typ.
–––
–––
–––
–––
Max.
13
90
60
42
Units
°C/W
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Current limited by package.
ƒ Pulse width 400μs; duty cycle 2%.
„ When mounted on 1 inch square copper board
… Rθ is measured at TJ of approximately 90°C.
2 www.irf.com © 2013 International Rectifier
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December 17, 2013

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