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IRFHS8242PBF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - HEXFET Power MOSFET - International Rectifier

भाग संख्या IRFHS8242PBF
समारोह HEXFET Power MOSFET
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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IRFHS8242PBF pdf
IRFHS8242PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
ΔΒVDSS/ΔTJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
VGS(th)
ΔVGS(th)
IDSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
IGSS Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
gfs Forward Transconductance
hQg Total Gate Charge
hQg Total Gate Charge
hQgs Gate-to-Source Charge
hQgd Gate-to-Drain Charge
RG
td(on)
tr
td(off)
tf
Ciss
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Diode Characteristics
25 ––– –––
V VGS = 0V, ID = 250μA
––– 18 ––– mV/°C Reference to 25°C, ID = 1mA
ed–––
e–––
10.0
17.0
13.0
21.0
mΩ
VGS = 10V, ID = 8.5A
VGS = 4.5V, ID = 6.8A
1.35
–––
1.8
-6.8
2.35
–––
V
mV/°C
VDS
= VGS,
ID
=
25μA
––– ––– 1.0
––– ––– 150
μA
VDS = 20V, VGS = 0V
VDS = 20V, VGS = 0V, TJ = 125°C
–––
–––
––– 100
––– -100
nA
VGS = 20V
VGS = -20V
19 ––– –––
dS VDS = 10V, ID = 8.5A
d––– 4.3 ––– nC VGS = 4.5V, VDS = 13V, ID = 8.5A
––– 10.4 –––
VDS = 13V
––– 1.8 ––– nC VGS = 10V
––– 1.6 –––
dID = 8.5A (See Fig. 6 & 16)
––– 1.9 ––– Ω
––– 6.5 –––
eVDD = 13V, VGS = 4.5V
d––– 19
––– 5.4
–––
–––
ns
ID = 8.5A
RG=1.8Ω
––– 5.3 –––
See Fig.17
––– 653 –––
––– 171 –––
––– 78 –––
VGS = 0V
pF VDS = 10V
ƒ = 1.0MHz
Parameter
Min. Typ. Max. Units
Conditions
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
d––– ––– 8.5
MOSFET symbol
D
A showing the
––– ––– 84
integral reverse
G
p-n junction diode.
S
––– ––– 1.0
d eV TJ = 25°C, IS = 8.5A , VGS = 0V
d––– 11 17 ns TJ = 25°C, IF = 8.5A , VDD = 13V
––– 11 17 nC di/dt = 280 A/μs
ton Forward Turn-On Time
Time is dominated by parasitic Inductance
Thermal Resistance
RθJC (Bottom)
RθJC (Top)
RθJA
RθJA
gJunction-to-Case
Parameter
gJunction-to-Case
fJunction-to-Ambient
fJunction-to-Ambient (<10s)
Typ.
–––
–––
–––
–––
Max.
13
90
60
42
Units
°C/W
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Current limited by package.
ƒ Pulse width 400μs; duty cycle 2%.
„ When mounted on 1 inch square copper board
… Rθ is measured at TJ of approximately 90°C.
… For DESIGN AID ONLY, not subject to production testing.
2 www.irf.com © 2013 International Rectifier
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December 17, 2013

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