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IRGPS40B120UP डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - INSULATED GATE BIPOLAR TRANSISTOR - International Rectifier

भाग संख्या IRGPS40B120UP
समारोह INSULATED GATE BIPOLAR TRANSISTOR
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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IRGPS40B120UP pdf
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IRGPS40B120UP
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Ref.Fig.
V(BR)CES Collector-to-Emitter Breakdown Voltage 1200 ––– ––– V VGE = 0V, IC = 500µA
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage ––– 0.40 ––– V/°C VGE = 0V, IC = 1.0mA, (25°C-125°C)
VCE(on)
Collector-to-Emitter Saturation Voltage ––– 3.12 3.40
IC = 40A
VGE = 15V
5, 6
––– 3.39 3.71 V IC = 50A
7, 9
––– 3.88 4.39
IC = 40A, TJ = 125°C
10
VGE(th)
VGE(th)/TJ
–––
Gate Threshold Voltage
4.0
Temperature Coeff. of Threshold Voltage –––
4.24 4.79
IC = 50A, TJ = 125°C
11
5.0 6.0
VCE = VGE, IC = 250µA
8, 9
-12 ––– mV/°C VCE = VGE, IC = 1.0mA, (25°C-125°C) 10 ,11
gfe Forward Transconductance
––– 30.5 ––– S VCE = 50V, IC = 40A, PW=80µs
ICES
Zero Gate Voltage Collector Current
––– ––– 500 µA VGE = 0V, VCE = 1200V
––– 100 1200
VGE = 0V, VCE = 1200V, TJ = 125°C
IGES Gate-to-Emitter Leakage Current ––– ––– ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
Eon
Eoff
Etot
Eon
Eoff
Etot
td(on)
tr
td(off)
tf
Cies
Coes
Cres
RBSOA
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operting Area
SCSOA
Short Circuit Safe Operting Area
Min. Typ. Max. Units
Conditions
––– 340 510
IC = 40A
––– 43 65 nC VCC = 600V
––– 165 248
VGE = 15V
––– 1400 1750 µJ IC = 40A, VCC = 600V
––– 1650 2050
VGE = 15V,RG = 4.7Ω, L =200µH
––– 3050 3800
Ls = 150nH
TJ = 25°C
––– 1950 2300
TJ = 125°C
––– 2200 2950 µJ Energy losses include "tail" and
––– 4150 5250
diode reverse recovery.
––– 76 99
––– 39 55
––– 332 365
IC = 40A, VCC = 600V
VGE = 15V, RG = 4.7L =200µH
ns Ls = 150nH, TJ = 125°C
––– 25 33
––– 4300 –––
VGE = 0V
––– 270 ––– pF VCC = 30V
––– 160 –––
f = 1.0MHz
FULL SQUARE
10 ––– –––
TJ = 150°C, IC = 160A, Vp =1200V
VCC = 1000V, VGE = +15V to 0V
RG = 4.7
TJ = 150°C, Vp =1200V
µs VCC = 900V, VGE = +15V to 0V,
RG = 4.7
Note:
 VCC = 80% (VCES), VGE = 20V, L = 100µH, RG = 4.7Ω.
Ref.Fig.
17
CT1
CT4
WF1
WF2
12,14
13, 15
CT4
WF1
WF2
16
4
CT3
WF4
2 www.irf.com

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