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IPD050N03L डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Fast switching MOSFET - Infineon Technologies

भाग संख्या IPD050N03L
समारोह Fast switching MOSFET
मैन्युफैक्चरर्स Infineon Technologies 
लोगो Infineon Technologies लोगो 
पूर्व दर्शन
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<?=IPD050N03L?> डेटा पत्रक पीडीएफ

IPD050N03L pdf
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
IPD050N03L G
IPS050N03L G
IPF050N03L G
IPU050N03L G
Value
68
-55 ... 175
55/175/56
Unit
W
°C
Parameter
Symbol Conditions
min.
Values
typ.
Unit
max.
Thermal characteristics
Thermal resistance, junction - case
SMD version, device on PCB
R thJC
R thJA
minimal footprint
6 cm² cooling area4)
-
-
-
- 2.2 K/W
- 75
- 50
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
30
-
-V
Gate threshold voltage
V GS(th) V DS=V GS, I D=250 µA
1
- 2.2
Zero gate voltage drain current
I DSS
V DS=30 V, V GS=0 V,
T j=25 °C
-
0.1
1 µA
V DS=30 V, V GS=0 V,
T j=125 °C
-
10 100
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
10 100 nA
Drain-source on-state resistance5) R DS(on) V GS=4.5 V, I D=30 A - 5.8 7.3 mW
V GS=10 V, I D=30 A
- 4.2 5
Gate resistance
RG
- 1.5 - W
Transconductance
g fs
|V DS|>2|I D|R DS(on)max,
I D=30 A
38
77
-S
2) See figure 3 for more detailed information
3) See figure 13 for more detailed information
4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
5) Measured from drain tab to source pin
Rev. 2.0
page 2
2013-10-28

विन्यास 12 पेज
डाउनलोड[ IPD050N03L Datasheet.PDF ]


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