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IXGX50N90B2D1 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - HiPerFAST IGBT - IXYS Corporation

भाग संख्या IXGX50N90B2D1
समारोह HiPerFAST IGBT
मैन्युफैक्चरर्स IXYS Corporation 
लोगो IXYS Corporation लोगो 
पूर्व दर्शन
1 Page
		
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IXGX50N90B2D1 pdf
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IXGH 50N90B2D1 IXGK 50N90B2D1
IXGX 50N90B2D1
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
gfs IC = IC110 ; VCE = 10 V, Note 1
Cies
Coes
Cres
VCE = 25 V, VGE = 0 V, f = 1 MHz
Qg
Qge IC = IC110 , VGE = 15 V, VCE = 0.5 VCES
Qgc
td(on)
tri
td(off)
tfi
Eoff
Inductive load
IC = IC110, VGE = 15 V
VCE = 720 V, RG = Roff = 5 Ω
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive load, TJ = 125°C
IC = IC110, VGE = 15 V
VCE = 720 V, RG = Roff = 5 Ω
RthJC
RthCH
Characteristic Values
min. typ. max.
25 40
S
2500
205
75
pF
pF
pF
135 nC
23 nC
50 nC
20 ns
28 ns
350 500 ns
200 ns
4.7 7.5 mJ
20 ns
28 ns
1.5 mJ
400 ns
420 ns
8.7 mJ
0.31 K/W
0.21
K/W
Diode
Symbol
IF25
Conditions
TC = 115°C
Maximum Ratings
30 A
Symbol
Conditions
(TJ = 25°C unless otherwise specified )
VF IF = 30 A; Note 1
TVJ = 150°C
ItRrrM
IF = 10 A; diF/dt = -100 A/μs; TVJ = 100°C
VR = 100 V; VGE = 0 V
RthJC
RthCH
with heat transfer paste
Note 1: Pulse test, t 300 μs, duty cycle 2 %
Characteristic Values
min. typ. max.
2.5 2.75 V
1.8 V
5.5 11.5 A
200 ns
0.25
0.9 K/W
K/W
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6771478 B2

विन्यास 7 पेज
डाउनलोड[ IXGX50N90B2D1 Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IXGX50N90B2D1HiPerFAST IGBTIXYS Corporation
IXYS Corporation


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