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APT39M60J डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel MOSFET - Microsemi Corporation

भाग संख्या APT39M60J
समारोह N-Channel MOSFET
मैन्युफैक्चरर्स Microsemi Corporation 
लोगो Microsemi Corporation लोगो 
पूर्व दर्शन
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<?=APT39M60J?> डेटा पत्रक पीडीएफ

APT39M60J pdf
Static Characteristics
TJ = 25°C unless otherwise specified
Symbol Parameter
Test Conditions
Min
VBR(DSS)
ΔVBR(DSS)/ΔTJ
RDS(on)
VGS(th)
ΔVGS(th)/ΔTJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Drain-Source On Resistance 3
Gate-Source Threshold Voltage
Threshold Voltage Temperature Coefficient
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 250µA
VGS = 10V, ID = 28A
VGS = VDS, ID = 2.5mA
600
3
IDSS Zero Gate Voltage Drain Current
VDS = 600V
VGS = 0V
TJ = 25°C
TJ = 125°C
IGSS Gate-Source Leakage Current
VGS = ±30V
APT39M60J
Typ Max Unit
V
0.57 V/°C
0.09 0.11
Ω
45V
-10 mV/°C
100 µA
500
±100 nA
Dynamic Characteristics
Symbol
gfs
Ciss
Crss
Coss
Parameter
Forward Transconductance
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
TJ = 25°C unless otherwise specified
Test Conditions
Min
VDS = 50V, ID = 28A
VGS = 0V, VDS = 25V
f = 1MHz
Co(cr) 4
Co(er) 5
Effective Output Capacitance, Charge Related
Effective Output Capacitance, Energy Related
VGS = 0V, VDS = 0V to 400V
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Current Rise Time
Turn-Off Delay Time
Current Fall Time
VGS = 0 to 10V, ID = 28A,
VDS = 300V
Resistive Switching
VDD = 400V, ID = 28A
RG = 2.2Ω 6 , VGG = 15V
Typ
55
11300
115
1040
550
285
280
60
120
65
75
190
60
Max
Unit
S
pF
nC
ns
Source-Drain Diode Characteristics
Symbol Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) 1
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
dv/dt
Peak Recovery dv/dt
Test Conditions
MOSFET symbol
showing the
integral reverse p-n
junction diode
(body diode)
D
G
S
ISD = 28A, TJ = 25°C, VGS = 0V
ISD = 28A 3
diSD/dt = 100A/µs, TJ = 25°C
ISD 28A, di/dt 1000A/µs, VDD = 100V,
TJ = 125°C
Min
Typ Max Unit
42
A
210
1.0
745
19
V
ns
µC
8 V/ns
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
2 Starting at TJ = 25°C, L = 4.03mH, RG = 25Ω, IAS = 28A.
3 Pulse test: Pulse Width < 380µs, duty cycle < 2%.
4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS.
5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of
VDS less than V(BR)DSS, use this equation: Co(er) = -1.10E-7/VDS^2 + 4.60E-8/VDS + 1.72E-10.
6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
Microsemi reserves the right to change, without notice, the specifications and information contained herein.

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APT39M60JN-Channel MOSFETMicrosemi Corporation
Microsemi Corporation


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