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IXFX220N15P डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Polar Power MOSFET HiperFET - IXYS Corporation

भाग संख्या IXFX220N15P
समारोह Polar Power MOSFET HiperFET
मैन्युफैक्चरर्स IXYS Corporation 
लोगो IXYS Corporation लोगो 
पूर्व दर्शन
1 Page
		
<?=IXFX220N15P?> डेटा पत्रक पीडीएफ

IXFX220N15P pdf
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
gfs VDS = 10V, ID = 60A, Note 1
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 1Ω (External)
Qg(on)
Qgs
Qgd
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RthJC
RthCS
Characteristic Values
Min. Typ. Max.
50 85
S
15.4
3040
35
nF
pF
pF
35 ns
28 ns
56 ns
17 ns
162 nC
58 nC
56 nC
0.12 °C/W
0.15 °C/W
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
IS VGS = 0V
ISM Repetitive, Pulse Width Limited by TJM
VSD IF = 110A, VGS = 0V, Note 1
trr
QRM
IRM
IF = 110A, -di/dt = 150A/μs
VR = 75V, VGS = 0V
Characteristic Values
Min. Typ. Max.
220 A
800 A
1.4 V
1.32
18.8
200 ns
μC
A
IXFK220N15P
IXFX220N15P
TO-264 Outline
Dim. Millimeter
Min. Max.
A 4.82 5.13
A1 2.54 2.89
A2 2.00 2.10
b 1.12 1.42
b1 2.39 2.69
b2 2.90 3.09
c 0.53 0.83
D 25.91 26.16
E 19.81 19.96
e 5.46 BSC
J 0.00 0.25
K 0.00 0.25
L 20.32 20.83
L1 2.29 2.59
P 3.17 3.66
Q 6.07 6.27
Q1 8.38 8.69
R 3.81 4.32
R1 1.78 2.29
S 6.04 6.30
T 1.57 1.83
Terminals: 1 - Gate
2 - Drain
3 - Source
4 - Drain
Inches
Min. Max.
.190
.100
.079
.202
.114
.083
.044
.094
.114
.056
.106
.122
.021 .033
1.020 1.030
.780 .786
.215 BSC
.000 .010
.000 .010
.800
.090
.820
.102
.125 .144
.239
.330
.247
.342
.150
.070
.170
.090
.238 .248
.062 .072
PLUS247TM Outline
Note 1: Pulse test, t 300μs, duty cycle, d 2%.
Terminals: 1 - Gate
2 - Drain
3 - Source
Dim. Millimeter
Min. Max.
A 4.83 5.21
A1 2.29 2.54
A2 1.91 2.16
b 1.14 1.40
b1 1.91 2.13
b2 2.92 3.12
C 0.61 0.80
D 20.80 21.34
E 15.75 16.13
e 5.45 BSC
L 19.81 20.32
L1 3.81 4.32
Q 5.59 6.20
R 4.32 4.83
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 0.244
.170 .190
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537

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डाउनलोड[ IXFX220N15P Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IXFX220N15PPolar Power MOSFET HiperFETIXYS Corporation
IXYS Corporation


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