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IXFX20N120P डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Polar Power MOSFET HiPerFET - IXYS Corporation

भाग संख्या IXFX20N120P
समारोह Polar Power MOSFET HiPerFET
मैन्युफैक्चरर्स IXYS Corporation 
लोगो IXYS Corporation लोगो 
पूर्व दर्शन
1 Page
		
<?=IXFX20N120P?> डेटा पत्रक पीडीएफ

IXFX20N120P pdf
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
Characteristic Values
Min. Typ.
Max.
gfs VDS= 20V, ID = 0.5 • ID25, Note 1
10 16
S
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
11.1 nF
600 pF
60 pF
RGi Gate input resistance
1.60 Ω
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 1Ω (External)
49
45
72
70
ns
ns
ns
ns
Qg(on)
Qgs
Qgd
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
193
74
85
nC
nC
nC
RthJC
RthCS
0.16 °C/W
0.15 °C/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
TJ = 25°C unless otherwise specified)
Min.
Typ.
Max.
IS VGS = 0V
20 A
ISM Repetitive, pulse width limited by TJM
VSD IF = IS, VGS = 0V, Note 1
80 A
1.5 V
trr
QRM
IRM
IF = 10A, -di/dt = 100A/μs
VR = 100V, VGS = 0V
300 ns
0.84 μC
9A
IXFK20N120P
IXFX20N120P
TO-264 (IXFK) Outline
Dim. Millimeter
Min. Max.
A 4.82 5.13
A1 2.54 2.89
A2 2.00 2.10
b 1.12 1.42
b1 2.39 2.69
b2 2.90 3.09
c 0.53 0.83
D 25.91 26.16
E 19.81 19.96
e 5.46 BSC
J 0.00 0.25
K 0.00 0.25
L 20.32 20.83
L1 2.29 2.59
P 3.17 3.66
Q 6.07 6.27
Q1 8.38 8.69
R 3.81 4.32
R1 1.78 2.29
S 6.04 6.30
T 1.57 1.83
Inches
Min. Max.
.190
.100
.079
.044
.094
.114
.021
.202
.114
.083
.056
.106
.122
.033
1.020 1.030
.780 .786
.215 BSC
.000 .010
.000
.800
.090
.125
.010
.820
.102
.144
.239
.330
.150
.070
.238
.247
.342
.170
.090
.248
.062 .072
PLUS247TM (IXFX) Outline
Note 1: Pulse test, t 300μs; duty cycle, d 2%.
IXYS reserves the right to change limits, test conditions, and dimensions.
Terminals:
1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Dim. Millimeter
Inches
Min. Max. Min. Max.
A 4.83 5.21
A1 2.29 2.54
A2 1.91 2.16
b 1.14 1.40
b1 1.91 2.13
b2 2.92 3.12
C 0.61 0.80
D 20.80 21.34
E 15.75 16.13
.190
.090
.075
.045
.075
.115
.024
.819
.620
.205
.100
.085
.055
.084
.123
.031
.840
.635
e 5.45 BSC
L 19.81 20.32
L1 3.81 4.32
.215 BSC
.780 .800
.150 .170
Q 5.59 6.20 .220 0.244
R 4.32 4.83 .170 .190
IXYS MOSFETs and IGBTs are covered 4,835,592
by one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537

विन्यास 4 पेज
डाउनलोड[ IXFX20N120P Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IXFX20N120HiPerFET Power MOSFETsIXYS Corporation
IXYS Corporation
IXFX20N120PPolar Power MOSFET HiPerFETIXYS Corporation
IXYS Corporation


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