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IXFV12N100PS डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Polar HiPerFET Power MOSFETs - IXYS Corporation

भाग संख्या IXFV12N100PS
समारोह Polar HiPerFET Power MOSFETs
मैन्युफैक्चरर्स IXYS Corporation 
लोगो IXYS Corporation लोगो 
पूर्व दर्शन
1 Page
		
<?=IXFV12N100PS?> डेटा पत्रक पीडीएफ

IXFV12N100PS pdf
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
gfs VDS = 20V, ID = 0.5 • ID25, Note 1
RGi Gate Input Resistance
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 2Ω (External)
Qg(on)
Qgs
Qgd
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RthJC
RthCS
(TO-247&PLUS220)
IXFH12N100P IXFV12N100P
IXFV12N100PS
Characteristic Values
Min. Typ.
Max.
PLUS220 Outline
4.8 8.8
S
1.9 Ω
4080
246
40
pF
pF
pF
30 ns
25 ns
60 ns
36 ns
80 nC
24 nC
35 nC
0.25
0.27 °C/W
°C/W
Source-Drain Diode
TJ = 25°C Unless Otherwise Specified)
IS VGS = 0V
ISM Repetitive, Pulse Width Limited by TJM
VSD IF = IS, VGS = 0V, Note 1
trr
QRM
IRM
IF = 6A, -di/dt = 100A/μs
VR = 100V, VGS = 0V
Characteristic Values
Min. Typ.
Max.
12 A
48 A
1.5 V
300 ns
0.8 μC
7.9 A
TO-247 Outline
123
P
Note 1: Pulse test, t 300μs, duty cycle, d 2%.
PLUS220SMD Outline
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
e
Terminals: 1 - Gate
3 - Source
2 - Drain
Dim. Millimeter
Min. Max.
A 4.7 5.3
A1 2.2 2.54
A2 2.2 2.6
b 1.0 1.4
bb12
1.65 2.13
2.87 3.12
C .4 .8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1 4.50
P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185
.087
.059
.209
.102
.098
.040
.065
.113
.055
.084
.123
.016
.819
.610
.031
.845
.640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734 B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2

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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IXFV12N100PPolar HiPerFET Power MOSFETsIXYS Corporation
IXYS Corporation
IXFV12N100PSPolar HiPerFET Power MOSFETsIXYS Corporation
IXYS Corporation


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