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IXGP7N60BD1 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - HiPerFAST IGBT - IXYS Corporation

भाग संख्या IXGP7N60BD1
समारोह HiPerFAST IGBT
मैन्युफैक्चरर्स IXYS Corporation 
लोगो IXYS Corporation लोगो 
पूर्व दर्शन
1 Page
		
<?=IXGP7N60BD1?> डेटा पत्रक पीडीएफ

IXGP7N60BD1 pdf
Symbol
gfs
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tri
td(off)
tfi
Eoff
td(on)
tri
E
on
td(off)
t
fi
Eoff
R
thJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC = IC90; VCE = 10 V,
Pulse test, t 300 µs, duty cycle 2 %
37
S
VCE = 25 V, VGE = 0 V, f = 1 MHz
500 pF
50 pF
17 pF
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
25 nC
15 nC
10 nC
Inductive load, TJ = 25°C
I = I , V = 15 V
C C90 GE
VCE = 0.8 • VCES, RG = Roff = 18
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V
VCE = 0.8 • VCES, RG = Roff = 18
Remarks: Switching times may increase
for V (Clamp) > 0.8 • V , higher T or
CE
CES
J
increased RG
10 ns
10 ns
100 200 ns
150 250 ns
0.3 0.6 mJ
10
15
0.15
200
250
0.6
ns
ns
mJ
ns
ns
mJ
IGBT
1.56 K/W
0.50
K/W
IXGA 7N60BD1
IXGP 7N60BD1
TO-220 AB Outline
Pins:
1 - Gate
2 - Collector 3 - Emitter
4 - Collector Bottom Side
Dim. Millimeter
Min. Max.
A 12.70 13.97
B 14.73 16.00
C 9.91 10.66
D 3.54 4.08
E 5.85 6.85
F 2.54 3.18
G 1.15 1.65
H 2.79 5.84
J 0.64 1.01
K 2.54 BSC
M 4.32 4.82
N 1.14 1.39
Q 0.35 0.56
R 2.29 2.79
Inches
Min. Max.
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
0.100 BSC
0.170 0.190
0.045 0.055
0.014 0.022
0.090 0.110
TO-263 AA Outline
Reverse Diode (FRED)
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VF
www.DataSheet4U.net
IRM
trr
RthJC
IF = 10A; TVJ = 150°C
TVJ = 25°C
VR = 100 V; IF =25A; -diF/dt = 100 A/µs
L < 0.05 µH; TVJ = 100°C
IF = 1 A; -di/dt = 50 A/µs;
VR = 30 V TJ = 25°C
Diode
1.96
2.95
2 2.5
V
V
V
35 ns
1.6 K/W
Min. Recommended Footprint
(Dimensions in inches and mm)
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
1. Gate
2. Collector
3. Emitter
4. Collector
Botton Side
Dim.
A
A1
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
L4
R
Millimeter
Min. Max.
4.06 4.83
2.03 2.79
0.51 0.99
1.14 1.40
0.46 0.74
1.14 1.40
8.64 9.65
7.11 8.13
9.65 10.29
6.86 8.13
2.54 BSC
14.61
2.29
1.02
1.27
0
15.88
2.79
1.40
1.78
0.38
0.46 0.74
Inches
Min. Max.
.160 .190
.080 .110
.020 .039
.045 .055
.018 .029
.045 .055
.340 .380
.280 .320
.380 .405
.270 .320
.100 BSC
.575 .625
.090 .110
.040 .055
.050 .070
0 .015
.018 .029
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025

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डाउनलोड[ IXGP7N60BD1 Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IXGP7N60BD1HiPerFAST IGBTIXYS Corporation
IXYS Corporation


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