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IXFT86N30T डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Trench HiperFET Power MOSFET - IXYS Corporation

भाग संख्या IXFT86N30T
समारोह Trench HiperFET Power MOSFET
मैन्युफैक्चरर्स IXYS Corporation 
लोगो IXYS Corporation लोगो 
पूर्व दर्शन
1 Page
		
<?=IXFT86N30T?> डेटा पत्रक पीडीएफ

IXFT86N30T pdf
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
gfs VDS = 10V, ID = 0.5 • ID25, Note 1
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 3.3Ω (External)
Qg(on)
Qgs
Qgd
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RthJC
RthCS
TO-247
Characteristic Values
Min. Typ. Max.
70 115
S
11.3 nF
720 pF
87 pF
16 ns
18 ns
54 ns
15 ns
180 nC
48 nC
50 nC
0.15 °C/W
0.21 °C/W
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
IS VGS = 0V
ISM Repetitive, Pulse Width Limited by TJM
VSD IF = IS, VGS = 0V, Note 1
trr
IRM
QRM
IF = 43A, -di/dt = 100A/μs,
VR = 100V, VGS = 0V
Characteristic Values
Min. Typ. Max.
86 A
340 A
1.5 V
150 ns
8.5 A
460 nC
IXFH86N30T
IXFT86N30T
TO-247 (IXFH) Outline
123
P
e
Terminals: 1 - Gate
3 - Source
2 - Drain
Tab - Drain
Dim. Millimeter
Min. Max.
A 4.7 5.3
AA12
2.2 2.54
2.2 2.6
b 1.0 1.4
bb12
1.65 2.13
2.87 3.12
C .4 .8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1 4.50
P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185
.087
.059
.209
.102
.098
.040
.065
.113
.055
.084
.123
.016
.819
.610
.031
.845
.640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-268 (IXFT) Outline
www.DataSheet4U.net
Note 1. Pulse test, t 300μs, duty cycle, d 2%.
Terminals: 1 - Gate
3 - Source
2 - Drain
Tab - Drain
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537

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डाउनलोड[ IXFT86N30T Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IXFT86N30TTrench HiperFET Power MOSFETIXYS Corporation
IXYS Corporation


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