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IXFX38N80Q2 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - HiPerFET Power MOSFETs Q2-Class - IXYS Corporation

भाग संख्या IXFX38N80Q2
समारोह HiPerFET Power MOSFETs Q2-Class
मैन्युफैक्चरर्स IXYS Corporation 
लोगो IXYS Corporation लोगो 
पूर्व दर्शन
1 Page
		
<?=IXFX38N80Q2?> डेटा पत्रक पीडीएफ

IXFX38N80Q2 pdf
IXFK38N80Q2 IXFN38N80Q2
IXFX38N80Q2
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
Characteristic Values
Min. Typ. Max.
gfs VDS= 10V, ID = 0.5 • ID25, Note 1
25 37
S
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
9500
888
185
pF
pF
pF
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 1Ω (External)
20
16
60
12
ns
ns
ns
ns
Qg(on)
Qgs
Qgd
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
190
44
88
nC
nC
nC
RthJC
RthCS
0.17 °C/W
0.15 °C/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
TJ
= 25°C
Min.
unless otherwise specified)
Typ.
Max.
IS VGS = 0V
ISM Repetitive, pulse width limited by TJM
38 A
150 A
VSD IF = IS, VGS = 0V, Note 1
trr
QRM
IRM
IF = 25A, -di/dt = 100A/μs
VR = 100V, VGS = 0V
1.5 V
250 ns
1 μC
10 A
TO-264 (IXFK) Outline
Dim. Millimeter
Min. Max.
A 4.82 5.13
A1 2.54 2.89
A2 2.00 2.10
b 1.12 1.42
b1 2.39 2.69
b2 2.90 3.09
c 0.53 0.83
D 25.91 26.16
E 19.81 19.96
e 5.46 BSC
J 0.00 0.25
K 0.00 0.25
L 20.32 20.83
L1 2.29 2.59
P 3.17 3.66
Q 6.07 6.27
Q1 8.38 8.69
R 3.81 4.32
R1 1.78 2.29
S 6.04 6.30
T 1.57 1.83
Inches
Min. Max.
.190
.100
.079
.044
.094
.114
.021
.202
.114
.083
.056
.106
.122
.033
1.020 1.030
.780 .786
.215 BSC
.000 .010
.000
.800
.090
.125
.010
.820
.102
.144
.239
.330
.150
.070
.238
.247
.342
.170
.090
.248
.062 .072
PLUS247TM (IXFX) Outline
Note 1: Pulse test, t 300μs; duty cycle, d 2%.
www.DataSheet4U.net
SOT-227B Outline
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
Terminals:
1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Dim. Millimeter
Inches
Min. Max. Min. Max.
A 4.83 5.21
A1 2.29 2.54
A2 1.91 2.16
b 1.14 1.40
b1 1.91 2.13
b2 2.92 3.12
C 0.61 0.80
D 20.80 21.34
E 15.75 16.13
.190
.090
.075
.045
.075
.115
.024
.819
.620
.205
.100
.085
.055
.084
.123
.031
.840
.635
e 5.45 BSC
L 19.81 20.32
L1 3.81 4.32
.215 BSC
.780 .800
.150 .170
Q 5.59 6.20 .220 0.244
R 4.32 4.83 .170 .190
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537

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डाउनलोड[ IXFX38N80Q2 Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IXFX38N80Q2HiPerFET Power MOSFETs Q2-ClassIXYS Corporation
IXYS Corporation


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