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8N90 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 900V N-CHANNEL MOSFET - Unisonic Technologies

भाग संख्या 8N90
समारोह 900V N-CHANNEL MOSFET
मैन्युफैक्चरर्स Unisonic Technologies 
लोगो Unisonic Technologies लोगो 
पूर्व दर्शन
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<?=8N90?> डेटा पत्रक पीडीएफ

8N90 pdf
8N90
Preliminary
Power MOSFET
„ ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Drain to Source Voltage
Gate to Source Voltage
VDSS
VGSS
900 V
±30 V
Continuous Drain Current (TC=25°C)
Pulsed Drain Current (Note 1)
Avalanche Current (Note 1)
ID
IDM
IAR
8A
25 A
6.3 A
Single Pulsed Avalanche Energy (Note 2)
Repetitive Avalanche Energy (Note 1)
Peak Diode Recovery dv/dt (Note 3)
EAS
EAR
dv/dt
850 mJ
17.1 mJ
4.0 V/ns
Total Power Dissipation (TC=25°C)
Linear Derating Factor above TC=25°C
Junction Temperature
PD
TJ
147
1.17
+150
W
W/°C
°C
Storage Temperature
TSTG
-55~+150
Note: 1. Repetitive Rating : Pulse width limited by maximum junction temperature
°C
2. L=40mH, IAS=6.3A, VDD= 50V, RG=25, Starting TJ=25°C
3. ISD 8A, di/dt 200A/μs, VDD BVDSS, Starting TJ=25°C
4. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„ THERMAL DATA
PARAMETER
SYMBOL
RATINGS
Junction to Ambient
θJA 62.5
Junction to Case
θJC 0.85
„ ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
BVDSS VGS=0V, ID=250µA
ΔBVDSS/ΔTJ ID=250μA, Referenced to 25°C
900
Drain-Source Leakage Current
Gate-Source Leakage Current
IDSS
VDS=900V, VGS=0V
VDS=720V, TC=125°C
IGSS VDS=0V ,VGS=±30V
ON CHARACTERISTICS
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance (Note 1)
VGS(TH)
RDS(ON)
gFS
VDS=VGS, ID=250µA
VGS=10V, ID=4A
VDS=50V, ID=4A4
3.0
DYNAMIC PARAMETERS
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS (Note 1, Note 2)
Total Gate Charge
QG
Gate-Source Charge
QGS
Gate-Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
Turn-ON Rise Time
tR
Turn-OFF Delay Time
tD(OFF)
Turn-OFF Fall Time
tF
VDS=25V,VGS=0V,f=1.0MHz
VDS=720V, VGS=10V, ID=8A
VDD=450V, ID=8A, RG=25
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
www.DatMaSahxiemetu4mUB.coodmy-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD IS =8A, VGS=0V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
tRR VGS=0V, IS=8A, dIF/dt=100A/μs
QRR (Note 1)
Note: 1. Pulse Test : Pulse width 300μs, Duty cycle 2%
2. Essentially independent of operating temperature
UNIT
°C/W
°C/W
TYP MAX UNIT
V
0.95 V/°C
10
100
±100
µA
µA
nA
5.0 V
940 1550 m
5.5 S
1600 2080
130 170
12 15
pF
pF
pF
35 45
10
14
40 90
110 230
70 150
70 150
nC
nC
nC
ns
ns
ns
ns
8A
25 A
1.4 V
530 ns
5.8 μC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 5
QW-R502-470.b

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