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8N80 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 800V N-CHANNEL MOSFET - Unisonic Technologies

भाग संख्या 8N80
समारोह 800V N-CHANNEL MOSFET
मैन्युफैक्चरर्स Unisonic Technologies 
लोगो Unisonic Technologies लोगो 
पूर्व दर्शन
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<?=8N80?> डेटा पत्रक पीडीएफ

8N80 pdf
8N80
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS 800 V
Gate-Source Voltage
VGSS ±30 V
Drain Current (Continuous) (TC=25°C)
ID
8A
Drain Current (Pulsed) (Note 1)
IDM 32 A
Avalanche Current (Note 1)
IAR 8 A
Single Pulse Avalanche Energy (Note 2)
EAS
850 mJ
Repetitive Avalanche Energy (Note 1)
EAR 17.8 mJ
Peak Diode Recovery dv/dt (Note 3)
dv/dt
4.5 V/ns
TO-220
178
Power Dissipation
TO-220F/TO-220F1
59 W
Linear Derating Factor above
TC=25°C
TO-220F2
TO-220
TO-220F/TO-220F1
TO-220F2
PD
62
1.43
0.47 W/°C
0.5
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 25mH, IAS = 8A, VDD = 50V, RG = 25 , Starting TJ = 25°C
3. ISD 8A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
4. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied
THERMAL DATA
PARAMETER
Junction to Ambient
TO-220
Junction to Case
TO-220F/TO-220F1
TO-220F2
SYMBOL
θJA
θJC
RATINGS
62.5
0.7
2.1
2.0
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
2 of 7
QW-R502-471.I

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