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IRG7PH30K10PBF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - INSULATED GATE BIPOLAR TRANSISTOR - International Rectifier

भाग संख्या IRG7PH30K10PBF
समारोह INSULATED GATE BIPOLAR TRANSISTOR
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
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IRG7PH30K10PBF pdf
IRG7PH30K10PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)CES
V(BR)CES/TJ
Parameter
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
VCE(on)
Collector-to-Emitter Saturation Voltage
Min.
1200
Typ.
1.27
2.05
2.56
2.65
Max. Units Conditions
e— V VGE = 0V, IC = 250µA
e— V/°C VGE = 0V, IC = 1mA (25°C-175°C)
2.35
dIC = 9.0A, VGE = 15V, TJ = 25°C
d— V IC = 9.0A, VGE = 15V, TJ = 150°C
d— IC = 9.0A, VGE = 15V, TJ = 175°C
VGE(th)
Gate Threshold Voltage
5.0 — 7.5 V VCE = VGE, IC = 400µA
VGE(th)/TJ Threshold Voltage temp. coefficient
— -16 — mV/°C VCE = VGE, IC = 400µA (25°C - 175°C)
gfe Forward Transconductance
— 6.2 — S VCE = 50V, IC = 9.0A, PW = 80µs
ICES
Collector-to-Emitter Leakage Current
1.0
400
25
µA
VGE = 0V, VCE = 1200V
VGE = 0V, VCE = 1200V, TJ = 175°C
IGES Gate-to-Emitter Leakage Current
— — ±100 nA VGE = ±30V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Qg Total Gate Charge (turn-on)
Min. Typ. Max. Units
— 45 68
dIC = 9.0A
Conditions
Qge Gate-to-Emitter Charge (turn-on)
— 8.7 13 nC VGE = 15V
Qgc Gate-to-Collector Charge (turn-on)
Eon Turn-On Switching Loss
— 20 30
— 530 760
VCC = 600V
dIC = 9.0A, VCC = 600V, VGE = 15V
Eoff Turn-Off Switching Loss
— 380 600 µJ RG = 22, L = 1000µH, LS = 150nH,TJ = 25°C
Etotal
td(on)
Total Switching Loss
Turn-On delay time
— 910 1360
— 14 31
Energy losses include tail & diode reverse recovery
ÃdIC = 9.0A, VCC = 600V, VGE = 15V
tr Rise time
— 24 41 ns RG = 22, L = 1000µH, LS = 150nH,TJ = 25°C
td(off)
Turn-Off delay time
— 110 130
tf Fall time
Eon Turn-On Switching Loss
— 38 56
— 850 —
ÃdIC = 9.0A, VCC = 600V, VGE=15V
Eoff Turn-Off Switching Loss
— 750 — µJ RG=22, L=1000µH, LS=150nH, TJ = 175°C
Etotal
td(on)
Total Switching Loss
Turn-On delay time
— 1600 —
— 12 —
Energy losses include tail & diode reverse recovery
dIC = 9.0A, VCC = 600V, VGE=15V
tr Rise time
— 23 — ns RG = 22, L = 1000µH, LS = 150nH
td(off)
Turn-Off delay time
— 130 —
TJ = 175°C
tf Fall time
— 270 —
Cies Input Capacitance
— 1070 —
pF VGE = 0V
Coes Output Capacitance
— 63 —
VCC = 30V
Cres Reverse Transfer Capacitance
— 26 —
f = 1.0Mhz
TJ = 175°C, IC = 36A
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
VCC = 960V, Vp =1200V
Rg = 10, VGE = +20V to 0V, TJ =175°C
SCSOA
Short Circuit Safe Operating Area
10 — — µs VCC = 600V, Vp =1200V ,TJ = 150°C,
Rg = 22, VGE = +15V to 0V
Ref.Fig
CT6
CT6
5,6,7
8,9,10
8,9
10,11
Ref.Fig
18
CT1
CT4
CT4
12,14
CT4
WF1, WF2
13,15
CT4
WF1
WF2
17
4
CT2
16, CT3
WF4
Notes:
 VCC = 80% (VCES), VGE = 20V, L = 200µH, RG = 51.
ww‚wP.uDlsaetawSihdtehet44U0.0cµosm; duty cycle 2%.
ƒ Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
„ Rθ is measured at TJ of approximately 90°C.
2 www.irf.com

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