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IRG7PH30K10DPBF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - INSULATED GATE BIPOLAR TRANSISTOR - International Rectifier

भाग संख्या IRG7PH30K10DPBF
समारोह INSULATED GATE BIPOLAR TRANSISTOR
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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IRG7PH30K10DPBF pdf
IRG7PH30K10DPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)CES
Parameter
Collector-to-Emitter Breakdown Voltage
Min. Typ. Max. Units Conditions
e1200 — — V VGE = 0V, IC = 250µA
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage
— 1.11 — V/°C VGE = 0V, IC = 1mA (25°C-150°C)
VCE(on)
Collector-to-Emitter Saturation Voltage
— 2.05 2.35
IC = 9.0A, VGE = 15V, TJ = 25°C
— 2.56 —
V IC = 9.0A, VGE = 15V, TJ = 150°C
VGE(th)
Gate Threshold Voltage
5.0 — 7.5 V VCE = VGE, IC = 400µA
VGE(th)/TJ Threshold Voltage temp. coefficient
— -15 — mV/°C VCE = VGE, IC = 400µA (25°C - 150°C)
gfe Forward Transconductance
— 6.2 — S VCE = 50V, IC = 9.0A, PW = 80µs
ICES
Collector-to-Emitter Leakage Current
— 1.0 25 µA VGE = 0V, VCE = 1200V
— 400 —
VGE = 0V, VCE = 1200V, TJ = 150°C
VFM Diode Forward Voltage Drop
— 2.0 3.0 V IF = 9.0A
— 2.1 —
IF = 9.0A, TJ = 150°C
IGES Gate-to-Emitter Leakage Current
— — ±100 nA VGE = ±30V
Ref.Fig
CT6
CT6
5,6,7
9,10,11
9,10
11,12
8
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg Total Gate Charge (turn-on)
— 45 68
IC = 9.0A
Qge Gate-to-Emitter Charge (turn-on)
— 8.7 13 nC VGE = 15V
Qgc Gate-to-Collector Charge (turn-on)
— 20 30
VCC = 600V
Eon Turn-On Switching Loss
— 530 760
IC = 9.0A, VCC = 600V, VGE = 15V
Eoff Turn-Off Switching Loss
— 380 600 µJ RG = 22, L = 1.0mH, LS = 150nH, TJ = 25°C
Etotal
Total Switching Loss
— 910 1360
Energy losses include tail & diode reverse recovery
td(on)
Turn-On delay time
— 14 31
IC = 9.0A, VCC = 600V, VGE = 15V
tr Rise time
— 24 41 ns RG = 22, L = 1.0mH, LS = 150nH, TJ = 25°C
td(off)
Turn-Off delay time
— 110 130
tf Fall time
— 38 56
Eon Turn-On Switching Loss
Eoff Turn-Off Switching Loss
— 810 —
IC = 9.0A, VCC = 600V, VGE=15V
— 680 — µJ RG=22, L=1.0mH, LS=150nH, TJ = 150°C
Etotal
Total Switching Loss
— 1490 —
Energy losses include tail & diode reverse recovery
td(on)
Turn-On delay time
— 11 —
IC = 9.0A, VCC = 600V, VGE = 15V
tr Rise time
— 23 — ns RG = 22, L = 1.0mH, LS = 150nH
td(off)
Turn-Off delay time
— 130 —
TJ = 150°C
tf Fall time
— 260 —
Cies Input Capacitance
— 1070 —
pF VGE = 0V
Coes Output Capacitance
— 63 —
VCC = 30V
Cres Reverse Transfer Capacitance
— 26 —
f = 1.0Mhz
TJ = 150°C, IC = 36A
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
VCC = 960V, Vp =1200V
Rg = 22, VGE = +20V to 0V
SCSOA
Short Circuit Safe Operating Area
10 — — µs TJ = 150°C, VCC = 600V, Vp =1200V
Rg = 22, VGE = +15V to 0V
Erec
Reverse Recovery Energy of the Diode
— 710 — µJ TJ = 150°C
trr Diode Reverse Recovery Time
— 140 — ns VCC = 600V, IF = 9.0A
wwIrrw.DataSheetP4Uea.kcoRmeverse Recovery Current
— 12 — A VGE = 15V, Rg = 20, L =1.0mH, Ls = 150nH
Ref.Fig
24
CT1
CT4
CT4
13,15
CT4
WF1, WF2
14,16
CT4
WF1
WF2
23
4
CT2
22, CT3
WF4
17,18,19
20,21
WF3
Notes:
 VCC = 80% (VCES), VGE = 20V, L = 36µH, RG = 33.
‚ Pulse width limited by max. junction temperature.
ƒ Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
„ Rθ is measured at TJ of approximately 90°C.
2
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