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AP1333U डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - P-CHANNEL ENHANCEMENT MODE POWER MOSFET - Advanced Power Electronics

भाग संख्या AP1333U
समारोह P-CHANNEL ENHANCEMENT MODE POWER MOSFET
मैन्युफैक्चरर्स Advanced Power Electronics 
लोगो Advanced Power Electronics लोगो 
पूर्व दर्शन
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<?=AP1333U?> डेटा पत्रक पीडीएफ

AP1333U pdf
AP1333U
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=-1mA
Static Drain-Source On-Resistance VGS=-10V, ID=-550mA
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=70oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=-4.5V, ID=-500mA
VGS=-2.5V, ID=-300mA
VDS=VGS, ID=-250uA
VDS=-5V, ID=-500mA
VDS=-20V, VGS=0V
VDS=-16V ,VGS=0V
VGS12V
ID=-500mA
VDS=-16V
VGS=-4.5V
VDS=-10V
ID=-500mA
RG=3.3Ω,VGS=-5V
RD=20Ω
VGS=0V
VDS=-10V
f=1.0MHz
-20 -
-V
- 0.01 - V/
- - 600 mΩ
- - 800 mΩ
- - 1000 mΩ
-0.5 - -1.2 V
-1-S
- - -1 uA
- - -10 uA
- - ±100 nA
- 1.7 2.7 nC
- 0.3 - nC
- 0.4 - nC
- 5 - ns
- 8 - ns
- 10 - ns
- 2 - ns
- 66 105.6 pF
- 25 - pF
- 20 - pF
Source-Drain Diode
Symbol
Parameter
VSD Forward On Voltage2
Test Conditions
IS=-300mA, VGS=0V
Min. Typ. Max. Unit
- - -1.2 V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on FR4 board, t 10 sec.
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